Radiative and Auger recombination in 1.3 μm InGaAsP and 1.5 μm InGaAs quantum-well lasers measured under high pressure at low and room temperatures

Jin, S.R.; Sweeney, S.J.; Ahmad, C.N.; Adams, A.R.; Murdin, B.N.
July 2004
Applied Physics Letters;7/19/2004, Vol. 85 Issue 3, p357
Academic Journal
We report on the pressure dependence of the threshold current in 1.3 μm InGaAsP and 1.5 μm InGaAs quantum-well lasers measured at low temperatures ∼100 K. It was found that the threshold current of both devices slowly increases with increasing pressure (i.e., increasing band gap) at ∼100 K consistent with the calculated variation of the radiative current. In contrast, at room temperature we observed a reduction of the threshold current with increasing pressure. Our low-temperature, high-pressure data confirm the results of previous atmospheric pressure measurements on the same devices which indicated a transition in the dominant recombination mechanism from radiative to Auger as the device temperature is increased from ∼100 to 300 K.


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