TITLE

Radiative and Auger recombination in 1.3 μm InGaAsP and 1.5 μm InGaAs quantum-well lasers measured under high pressure at low and room temperatures

AUTHOR(S)
Jin, S.R.; Sweeney, S.J.; Ahmad, C.N.; Adams, A.R.; Murdin, B.N.
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/19/2004, Vol. 85 Issue 3, p357
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the pressure dependence of the threshold current in 1.3 μm InGaAsP and 1.5 μm InGaAs quantum-well lasers measured at low temperatures ∼100 K. It was found that the threshold current of both devices slowly increases with increasing pressure (i.e., increasing band gap) at ∼100 K consistent with the calculated variation of the radiative current. In contrast, at room temperature we observed a reduction of the threshold current with increasing pressure. Our low-temperature, high-pressure data confirm the results of previous atmospheric pressure measurements on the same devices which indicated a transition in the dominant recombination mechanism from radiative to Auger as the device temperature is increased from ∼100 to 300 K.
ACCESSION #
13791222

 

Related Articles

  • Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation. Qu, Y.; Zhang, J. X.; Uddin, A.; Liu, C. Y.; Yuan, S.; Chan, M. C. Y.; Bo, B.; Liu, G.; Jiang, H. // Applied Physics A: Materials Science & Processing;Feb2006, Vol. 82 Issue 2, p305 

    Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-μm -stripe-width laser....

  • Continuous-wave operation of distributed feedback interband cascade lasers. Yang, Rui Q.; Hill, C.J.; Yang, B.H.; Wong, C.M.; Muller, R.E.; Echtermach, P.M. // Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3699 

    Continuous-wave distributed feedback interband cascade lasers operating near 3.3 μm are reported. Single longitudinal mode emission is achieved with side mode suppression ratio greater than 30 dB at temperatures up to 175 K. A clear Bragg stop band in the laser emission spectrum indicates a...

  • Many-body optical gain of GaInNAs/GaAs strained quantum-well lasers. Park, Seoung-Hwan // Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p890 

    Optical properties of strained GaInNAs/GaAs quantum wells (QWs) are investigated using the multiband effective-mass theory. We also take into account the many-body effects on the optical gain spectrum. It is observed that the transition energy decreases with increasing In or N mole fraction. The...

  • Extrinsic contributions to photocurrents from quantum-wells. Giri, Rakshyakar; Schwirzke-Schaaf, Sandy; Tomm, Jens W. // Journal of Applied Physics;Jul2010, Vol. 108 Issue 1, p013103 

    Photocurrent (PC) spectra representing the in-plane absorption of the quantum-wells (QWs) in diode lasers are monitored. Spectra from pristine and systematically aged devices are analyzed and aging-induced changes are explained within the frame of rate-equation models for nonequilibrium...

  • Intersubband Absorption of Light in Heterostructures with Double Tunnel-Coupled GaAs/AlGaAs Quantum Wells. Vorob'ev, L.E.; Panevin, V.Yu.; Fedosov, N.K.; Firsov, D.A.; Shalygin, V.A.; Kapaev, V.V.; Hanna, S.; Schmidt, S.; Zibik, E.A.; Seilmeier, A. // Semiconductors;Jan2005, Vol. 39 Issue 1, p41 

    Intersubband absorption of mid-IR light was studied in heterostructures with asymmetrical tunnel-coupled quantum wells in equilibrium conditions and under high-power pumping by picosecond pulses of light. The energy spectrum of electrons in tunnel-coupled quantum wells was found from an analysis...

  • Terahertz electro-optic wavelength conversion in GaAs quantum wells: Improved efficiency and room-temperature operation. Carter, S.G.; Ciulin, V.; Sherwin, M.S.; Hanson, M.; Huntington, A.; Coldren, L.A.; Gossard, A.C. // Applied Physics Letters;2/9/2004, Vol. 84 Issue 6, p840 

    A 4-μm-thick sample containing 50 GaAs/AlGaAs asymmetric coupled quantum wells was driven with a strong terahertz (THz) electric field of frequency ω[sub THz] and probed with a near-infrared (NIR) laser of frequency ω[sub NIR]. The THz beam modulated the probe to generate sidebands at...

  • Double-band generation in quantum-well semiconductor laser at high injection levels. Vinokurov, D. A.; Zorina, S. A.; Kapitonov, V. A.; Leshko, A. Yu.; Lyutetskiǐ;, A. V.; Nalet, T. A.; Nikolaev, D. N.; Pikhtin, N. A.; Rudova, N. A.; Slipchenko, S. O.; Sokolova, Z. N.; Stankevich, A. L.; Fetisova, N. V.; Khomylev, M. A.; Shamakhov, V. V.; Borshchev, K. S.; Arsent'ev, I. N.; Bondarev, A. D.; Trukan, M. K.; Tarasov, I. S. // Semiconductors;Oct2007, Vol. 41 Issue 10, p1230 

    Spectral and emission-power characteristics of semiconductor lasers based on quantum-dimensional asymmetric heterostructures with separate confinement in a system of InGaAs/GaAs/AlGaAs alloys are studied in the case of high pump levels in the pulsed mode of lasing (200 A, 100 ns, and 10 kHz). It...

  • Electric-field control of the occupancy of the upper laser subband in quantum-well structures with asymmetric barriers designed for unipolar laser operation. Aleshchenko, Yu. A.; Zhukov, A E..; Kapaev, V. V.; Kopaev, Yu. V.; Kop'ev, P. S.; Ustinov, V. M. // Semiconductors;Jul2008, Vol. 42 Issue 7, p838 

    Experimental and theoretical studies of triple-quantum-well structures implementing a prototype active element for a novel type of unipolar laser were carried out. Such a laser, whose design was suggested by us previously, is based on highly asymmetric quantum wells (with barriers of noticeably...

  • Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire. Wang, Q.; Gong, Y. P.; Zhang, J. F.; Bai, J.; Ranalli, F.; Wang, T. // Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p161904 

    It is necessary to further improve crystal quality of AlGaN multiple quantum well (MQW) structures on sapphire in order to achieve ultraviolet (UV) laser diodes. Two buffer technologies have been introduced based on our high temperature AlN buffer technology: modified “GaN...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics