Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide

Ling, C.C.; Lui, M.K.; Ma, S.K.; Chen, X.D.; Fung, S.; Beling, C.D.
July 2004
Applied Physics Letters;7/19/2004, Vol. 85 Issue 3, p384
Academic Journal
Acceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS). Because of its high concentration and low ionization energy, a level at EV+34 meV is found to be the important acceptor responsible for the p-type conduction of the samples. Two different kinds of VGa-related defects (lifetimes of 280 ps and 315 ps, respectively) having different microstructures were characterized by PLS. By comparing their annealing behaviors and charge state occupancies, the EV+34 meV level could not be related to the two VGa-related defects.


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