The structural and optical behaviors of K-doped ZnO/Al2O3(0001) films

Sung-Kyu Kim; Shin Ae Kim; Chang-Hee Lee; Hyeon-Jun Lee; Se-Young Jeong; Chae Ryong Cho
July 2004
Applied Physics Letters;7/19/2004, Vol. 85 Issue 3, p419
Academic Journal
K-doped ZnO films were prepared on Al2O3(0001) substrates by solution deposition. For the prepared thin films of Zn1-xKxO (x=0.002, 0.01, 0.02, 0.05, 0.1), we carried out x-ray diffraction, transmittance spectroscopy, photoluminescence, Hall measurement and x-ray photoemission spectroscopy study, and found that properties like the crystallinity, optical band gap, carrier concentrations and chemical binding states changed at a K doping concentration of 2 mol %. From these results, we suggest that the doped K in ZnO films processed by the sol–gel method plays a different role at K doping concentrations below 2 mol % and above 2 mol %.


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