TITLE

Transport properties of single-crystal tetracene field-effect transistors with silicon dioxide gate dielectric

AUTHOR(S)
Newman, Christopher R.; Chesterfield, Reid J.; Merlo, Jeffrey A.; Frisbie, C. Daniel
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/19/2004, Vol. 85 Issue 3, p422
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Single-crystal organic field-effect transistors (SX-OFETs) with channel lengths of 1 and 100 μm have been fabricated by adhering thin crystals of tetracene to freshly ashed SiO2 substrates containing countersunk gold contacts. The intrinsic transport properties of the tetracene single crystals, corrected for potential contact effects by using a standard four-probe configuration, have been measured from room temperature down to 4.2 K. These OFETs exhibit mobilities as high as 0.1 cm2 V-1s-1, subthreshold swings of <500 mV/decade, and Ion/Ioff ratios in excess of 109. The larger devices (L=100 μm,W=1000 μm) show thermally activated mobilities over the temperature range 200 K105 V/cm.
ACCESSION #
13791200

 

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