TITLE

Single crystal SrTiO3 field-effect transistor with an atomically flat amorphous CaHfO3 gate insulator

AUTHOR(S)
Shibuya, Keisuke; Ohnishi, Tsuyoshi; Lippmaa, Mikk; Kawasaki, Masashi; Koinuma, Hideomi
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/19/2004, Vol. 85 Issue 3, p425
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have observed prominent transistor action in a transition-metal oxide which is not traditionally viewed as a semiconductor. We have fabricated a field-effect transistor composed of SrTiO3(100) single crystal as a channel and an amorphous CaHfO3 layer as a gate insulator. The amorphous CaHfO3 gate insulator layer was atomically flat and had a breakdown field of over 5 MV/cm. All electrode and channel patterning was done with simple contact masks. The whole fabrication process took place at room temperature. The device showed a field-effect mobility of 0.4–0.5 cm2/V s and an on-to-off channel current ratio of ∼105 at room temperature.
ACCESSION #
13791199

 

Related Articles

  • Bis(dithienothiophene) organic field-effect transistors with a high ON/OFF ratio. Sirringhaus, H.; Friend, R.H. // Applied Physics Letters;12/29/1997, Vol. 71 Issue 26, p3871 

    Synthesizes the bis(dithienothiophene) (BDT) organic field-effect transistors with high on/off ratios. Comparison of the turn-on characteristics of BDT with that of amorphous silicon thin film resistors; Structure of polycrystalline BDT films; Characteristics of the optical absorption spectra...

  • Field-modulated thermopower in SrTiO3-based field-effect transistors with amorphous 12CaO·7Al2O3 glass gate insulator. Ohta, Hiromichi; Masuoka, Yumi; Asahi, Ryoji; Kato, Takeharu; Ikuhara, Yuichi; Nomura, Kenji; Hosono, Hideo // Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p113505 

    We report transistor characteristics and field-modulated thermopower (S) for single crystal SrTiO3-based field-effect transistors (FETs). We use 150-nm-thick amorphous 12CaO·7Al2O3 glass as the gate insulator of the SrTiO3-FET. The resulting SrTiO3-FET exhibits excellent transistor...

  • Temperature dependent field effect in organic-based thin-film transistor and its spectroscopic... Schauer, F. // Journal of Applied Physics;7/1/1999, Vol. 86 Issue 1, p525 

    Presents information on a study which modeled a thin field-effect transistor based on amorphous semiconductors using an iterative scheme. Modeling of the field-effect transistor; Conclusions.

  • Amorphous silicon phototransistors. Kaneko, Yoshiyuki; Koike, Norio; Tsutsui, Ken; Tsukada, Toshihisa // Applied Physics Letters;2/12/1990, Vol. 56 Issue 7, p650 

    An amorphous silicon field-effect phototransistor is fabricated using a processing technology compatible with conventional amorphous silicon-silicon nitride thin-film transistors. The phototransistor has an offset structure between the source and gate electrodes, where light is absorbed to...

  • Organic field effect transistors from triarylamine side-chain polymers. Hüttner, Sven; Sommer, Michael; Steiner, Ullrich; Thelakkat, Mukundan // Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p073503 

    We present a comparative study of organic field effect transistors (OFET) based on amorphous side-chain p-type polymers obtained from controlled radical polymerization. The side-chain moieties consist of different triarylamines such as triphenylamine, dimethoxytriphenylamine, and...

  • LaMnO3/SrMnO3 interfaces with coupled charge-spin-orbital modulation. Yamada, Hiroyuki; Kawasaki, M.; Lottermoser, T.; Arima, T.; Tokura, Y. // Applied Physics Letters;7/31/2006, Vol. 89 Issue 5, p052506 

    The artificial perovskite superlattices composed of LaMnO3 and SrMnO3 have been investigated to elucidate the interface electronic phases created by adjoining the two Mott insulators. Charge transfer at the interface due to chemical potential difference, as observed in p-n junctions of...

  • Low temperature metallic state induced by electrostatic carrier doping of SrTiO3. Nakamura, H.; Takagi, H.; Inoue, I. H.; Takahashi, Y.; Hasegawa, T.; Tokura, Y. // Applied Physics Letters;9/25/2006, Vol. 89 Issue 13, p133504 

    Transport properties of SrTiO3-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below R□∼10 kΩ at low temperatures, with carrier mobility exceeding 1000 cm2/V s. The temperature...

  • Delta-doped epitaxial La:SrTiO3 field-effect transistor. Nishio, K.; Matvejeff, M.; Takahashi, R.; Lippmaa, M.; Sumiya, M.; Yoshikawa, H.; Kobayashi, K.; Yamashita, Y. // Applied Physics Letters;6/13/2011, Vol. 98 Issue 24, p242113 

    We show that by delta doping a deep depletion layer at a SrTiO3/CaHfO3 interface with La, it is possible to achieve a separation of physical dopants from the current transport layer in SrTiO3. This allows us to construct an epitaxial top-gate field-effect transistor that can switch a channel...

  • Long-range order on the atomic scale induced at CoFeB/MgO interfaces. Eilers, Gerrit; Ulrichs, Henning; Münzenberg, Markus; Thomas, Andy; Thiel, Karsten; Seibt, Michael // Journal of Applied Physics;Apr2009, Vol. 105 Issue 7, p073701 

    The amorphous (a-) CoFeB/crystalline (c-) MgO based tunneling system interface has been studied by means of quantitative high resolution transmission electron microscopy from atomic to micrometer length scales with increasing annealing temperatures. On the micron scale an irregular nucleation is...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics