High-quality HfSixOy gate dielectrics fabricated by solid phase interface reaction between physical-vapor-deposited metal–Hf and SiO2 underlayer

Watanabe, Heiji; Saitoh, Motofumi; Ikarashi, Nobuyuki; Tatsumi, Toru
July 2004
Applied Physics Letters;7/19/2004, Vol. 85 Issue 3, p449
Academic Journal
We fabricated high-quality Hf–silicate (HfSixOy) gate dielectrics by utilizing the solid phase interface reaction between physical-vapor-deposited metal–Hf (typically 0.5 nm thick) and SiO2 underlayers. Metal diffusion to the SiO2 layer increases the permittivity of the underlayer, while preservation of the initial SiO2/Si bottom interface ensures good electrical properties of the gate dielectrics. The Hf–silicate layer remains amorphous and the poly-Si/HfSixOy gate stack endures activation annealing at 1000 °C. The interface trap density was comparable to that of conventional SiO2 dielectrics and the hysteresis of capacitance–voltage curves was as low as 4 mV for a bias swing between -2 and +2.5 V. Moreover, high electron mobility, equal to 89% of the universal mobility, was obtained for the high-k gate transistor.


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