TITLE

Interlayer composition of HfO2/Si(001) films

AUTHOR(S)
Copel, M.; Reuter, M.C.; Jamison, P.
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/19/2004, Vol. 85 Issue 3, p458
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report medium energy ion scattering results that determine the extent of Hf incorporation in the interfacial region of HfO2/Si(001) films. The lack of change in the Hf backscatter peak after interlayer growth by in situ oxidation indicates extremely low levels of Hf incorporation. We conclude that silicate formation is not a significant factor in determining capacitances of HfO2/Si(001) structures, provided that the deposition technique does not involve creation of a silicide as an intermediate step.
ACCESSION #
13791188

 

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