Interlayer composition of HfO2/Si(001) films

Copel, M.; Reuter, M.C.; Jamison, P.
July 2004
Applied Physics Letters;7/19/2004, Vol. 85 Issue 3, p458
Academic Journal
We report medium energy ion scattering results that determine the extent of Hf incorporation in the interfacial region of HfO2/Si(001) films. The lack of change in the Hf backscatter peak after interlayer growth by in situ oxidation indicates extremely low levels of Hf incorporation. We conclude that silicate formation is not a significant factor in determining capacitances of HfO2/Si(001) structures, provided that the deposition technique does not involve creation of a silicide as an intermediate step.


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