TITLE

Concentration quenching of Eu-related luminescence in Eu-doped GaN

AUTHOR(S)
Hyungjin Bang; Morishima, Shinichi; Sawahata, Junji; Jongwon Seo; Takiguchi, Mikio; Tsunemi, Masato; Akimoto, Katsuhiro; Nomura, Masaharu
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p227
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The dependence of Europium (Eu)-related luminescence intensity on the Eu concentration in Eu-doped GaN was studied. This luminescence is observed at 622 nm and originates from the intra-4f transition of the Eu3+ ion. The intensity of the luminescence increased with increasing Eu concentration, up to about 2 at. %, and then abruptly decreased. It was found that polycrystalline growth began to be induced at Eu concentrations of more than 2 at. %. In addition, clear evidence for the formation of EuN compounds was obtained by x-ray diffraction and extended x-ray absorption fine structure analysis. The cause of the concentration quenching is likely to be related to the polycrystalline growth as well as EuN formation.
ACCESSION #
13719778

 

Related Articles

  • Improved luminescent properties of Eu activated phosphor α-SrPO by charge compensation. Fan, Guo-Dong; Lin, Chen; Fan, Di; Liu, Bao-Jian; Yang, Wei // Journal of Materials Science: Materials in Electronics;Jan2016, Vol. 27 Issue 1, p892 

    A series of phosphors SrPO:xEu (x = 0.02-0.16), SrPO:xEu, xM (x = 0.1, M = Li, Na, K) and SrPO:xEu xNa (x = 0.02-0.16) were synthesized through high-temperature solid-state reaction. It is found that Na is the best compensator among Li, Na, K by XRD and emission analysis. The luminescent...

  • SYNTHESIS OF SrF2:Eu2+ UP CONVERSION PHOSPHORS. Ugemuge, N. S.; Muke, A. M.; Muley, A. A.; Gayner, C. S.; Moharil, S. V. // International Journal of Knowledge Engineering;2012, Vol. 3 Issue 1, p67 

    SrF2:Eu upconversion luminescence phosphor synthesized via solid state metathesis route. The samples were characterized with X-ray diffraction (XRD) and upconversion emission spectra. A systematic study on the photoluminescence of Eu3+ doped SrF2 samples with cubic shape showed that the optical...

  • Defects induced in GaN by europium implantation. Mamor, M.; Matias, V.; Vantomme, A.; Colder, A.; Marie, P.; Ruterana, P. // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2244 

    We have investigated structural and electrical properties of defects introduced during room temperature europium implantation into GaN. Two geometries, random and channeled implantation, were used. Rutherford backscattering and channeling analysis reveals that implantation induces a...

  • Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates. Krysko, M.; Franssen, G.; Suski, T.; Albrecht, M.; Łucznik, B.; Grzegory, I.; Krukowski, S.; Czernecki, R.; Grzanka, S.; Makarowa, I.; Leszczynski, M.; Perlin, P. // Applied Physics Letters;11/19/2007, Vol. 91 Issue 21, p211904 

    The influence of the miscut angle of GaN substrate on compositional and optical properties of InxGa1-xN epilayers (0.05

  • Role of edge dislocations in enhancing the yellow luminescence of n-type GaN. Zhao, D. G.; Jiang, D. S.; Yang, Hui; Zhu, J. J.; Liu, Z. S.; Zhang, S. M.; Liang, J. W.; Li, X.; Li, X. Y.; Gong, H. M. // Applied Physics Letters;6/12/2006, Vol. 88 Issue 24, p241917 

    We investigate the origin of yellow luminescence in n-type GaN. It is found that the relative intensity of yellow luminescence increases as the full width at half maximum of the x-ray diffraction rocking curve at the (102) plane increases. This indicates that the yellow luminescence is related...

  • Luminescent properties of Eu(ttfa)3 complexes incorporated into MSU-4 mesoporous silica matrices. Saliba, Lucas Falquetti; de Sousa Filho, Paulo César; de Castro, Gustavo Rocha; Serra, Osvaldo Antonio; Martines, Marco Antonio Utrera // Biointerface Research in Applied Chemistry;2016, Vol. 6 Issue 6, p1872 

    A luminescent material has been prepared through formation of the Eu3+ β-diketonate complex [Eu(ttfa)3(H2O)2] in methanolic medium within the channels of MSU-4 ordered mesoporous silica by post-grafting synthesis. Using simple wet incorporation methods, the Eu3+ ions were first impregnated...

  • Luminescence spectroscopy of GaN in the high-temperature regime from room temperature to 900 °C. Young, A. P.; Young, A.P.; Brillson, L. J.; Brillson, L.J. // Applied Physics Letters;7/31/2000, Vol. 77 Issue 5 

    We have measured the optical luminescence spectrum of GaN from the near infrared to the near ultraviolet at elevated temperatures. Despite intense blackbody radiation above 600 °C, luminescence is observable at 3 eV or greater at temperatures as high as 900 °C, i.e., including...

  • GaN grown on hydrogen plasma cleaned 6H-SiC substrates. Lin, M.E.; Strite, S.; Agarwal, A.; Salvador, A.; Zhou, G.L.; Teraguchi, N.; Rockett, A.; Morkoc, H. // Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p702 

    Reports the epitaxial gallium nitride (GaN) layers grown on 6H-silicon carbide (SiC) (0001) substrates. Techniques for the preparation of SiC substrate; Growth of high quality GaN on SiC substrates; Purpose of using the x-ray diffractometry.

  • Resonant energy transfer between Eu luminescent sites and their local geometry in GaN. Dolf Timmerman; Ryuta Wakamatsu; Kazuteru Tanaka; Dong-gun Lee; Atsushi Koizumi; Yasufumi Fujiwara // Applied Physics Letters;10/12/2015, Vol. 107 Issue 15, p1 

    u-doped GaN is a solid state material with promising features for quantum manipulation. In this study, we investigate the population dynamics of Eu in ions in this system by resonant excitation. From differences in the emission related to transitions between the 5D0 and 7F2 manifold in the Eu...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics