Concentration quenching of Eu-related luminescence in Eu-doped GaN

Hyungjin Bang; Morishima, Shinichi; Sawahata, Junji; Jongwon Seo; Takiguchi, Mikio; Tsunemi, Masato; Akimoto, Katsuhiro; Nomura, Masaharu
July 2004
Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p227
Academic Journal
The dependence of Europium (Eu)-related luminescence intensity on the Eu concentration in Eu-doped GaN was studied. This luminescence is observed at 622 nm and originates from the intra-4f transition of the Eu3+ ion. The intensity of the luminescence increased with increasing Eu concentration, up to about 2 at. %, and then abruptly decreased. It was found that polycrystalline growth began to be induced at Eu concentrations of more than 2 at. %. In addition, clear evidence for the formation of EuN compounds was obtained by x-ray diffraction and extended x-ray absorption fine structure analysis. The cause of the concentration quenching is likely to be related to the polycrystalline growth as well as EuN formation.


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