Field-induced resistive switching in metal-oxide interfaces

Tsui, S.; Baikalov, A.; Cmaidalka, J.; Sun, Y. Y.; Wang, Y. Q.; Xue, Y. Y.; Chu, C. W.; Chen, L.; Jacobson, A. J.
July 2004
Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p317
Academic Journal
We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10 nm and that the switch is accompanied by a small capacitance increase associated with charge accumulation. Based on interfacial I–V characterization and measurement of the temperature dependence of the resistance, we propose that a field-created crystalline defect mechanism, which is controllable for devices, drives the switch.


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