Room temperature operation of InAs/AlSb quantum cascade lasers

Teissier, R.; Barate, D.; Vicet, A.; Alibert, C.; Baranov, A. N.; Marcadet, X.; Renard, C.; Garcia, M.; Sirtori, C.; Revin, D.; Cockburn, J.
July 2004
Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p167
Academic Journal
The room temperature operation of InAs/AlSb quantum cascade lasers is reported. The structure, grown by molecular beam epitaxy on an InAs substrate, is based on a vertical transition design and a low loss n+-InAs plasmon enhanced waveguide. The lasers emitting near 4.5 μm operate in pulse regime up to 300 K. The threshold current density of 3.18-mm-long lasers is 1.5 kA/cm2 at 83 K and 9 kA/cm2 at 300 K.


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