Correlation of the generation-recombination noise with reliability issues of polycrystalline silicon thin-film transistors

Hastas, N. A.; Dimitriadis, C. A.; Kamarinos, G.
July 2004
Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p311
Academic Journal
Low-frequency noise measurements have been carried out in polycrystalline silicon thin-film transistors (polysilicon TFTs) with different interface roughnesses. Independently of the interface roughness, the drain current noise can be ascribed to carrier number fluctuations. In devices with a large interface roughness, a noise overshoot is observed at drain currents around 3 μA, attributed to generation-recombination (g-r) centers. The traps responsible for the g-r noise are located within the gate oxide near the interface, created by the carriers injected into the gate oxide by the field enhanced at the rough polysilicon/SiO2 interface. The g-r noise corresponds to a single trap level of density 3.8×1017 cm-3 and time constant 20 ms. Devices exhibiting g-r noise degrade more rapidly during electrical stress.


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