TITLE

Correlation of the generation-recombination noise with reliability issues of polycrystalline silicon thin-film transistors

AUTHOR(S)
Hastas, N. A.; Dimitriadis, C. A.; Kamarinos, G.
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p311
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-frequency noise measurements have been carried out in polycrystalline silicon thin-film transistors (polysilicon TFTs) with different interface roughnesses. Independently of the interface roughness, the drain current noise can be ascribed to carrier number fluctuations. In devices with a large interface roughness, a noise overshoot is observed at drain currents around 3 μA, attributed to generation-recombination (g-r) centers. The traps responsible for the g-r noise are located within the gate oxide near the interface, created by the carriers injected into the gate oxide by the field enhanced at the rough polysilicon/SiO2 interface. The g-r noise corresponds to a single trap level of density 3.8×1017 cm-3 and time constant 20 ms. Devices exhibiting g-r noise degrade more rapidly during electrical stress.
ACCESSION #
13719765

 

Related Articles

  • Drain current model for thin-film transistors with interface trap states. Tsuji, Hiroshi; Kamakura, Yoshinari; Taniguchi, Kenji // Journal of Applied Physics;Feb2010, Vol. 107 Issue 3, p034502 

    A surface-potential-based drain current model for thin-film transistors (TFTs) is presented. In this model, the influence of traps located at the gate-oxide/silicon interface is accounted for to reproduce the gradual increase in the subthreshold current. The model uses a single equation that...

  • Electric field-induced structural changes in pentacene-based organic thin-film transistors studied by in situ micro-Raman spectroscopy. Cheng, H. L.; Chou, W. Y.; Kuo, C. W.; Tang, F. C.; Wang, Y. W. // Applied Physics Letters;4/17/2006, Vol. 88 Issue 16, p161918 

    We have investigated the electric field-induced microscopic structural changes in polycrystalline pentacene-based organic transistors by using in situ micro-Raman spectroscopy. Extra vibrational modes resulting from molecular coupling effect in pentacene film were studied. The herringbone...

  • Polycrystalline silicon thin-film transistors on quartz fiber. Sugawara, Yuta; Uraoka, Yukiharu; Yano, Hiroshi; Hatayama, Tomoaki; Fuyuki, Takashi; Nakamura, Toshihiro; Toda, Sadayuki; Koaizawa, Hisashi; Mimura, Akio; Suzuki, Kenkichi // Applied Physics Letters;11/12/2007, Vol. 91 Issue 20, p203518 

    We demonstrate the fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on a thin quartz fiber for the first time. The poly-Si used in the active layer of the TFTs was prepared by excimer laser annealing of an amorphous Si thin film deposited on the fiber. Top-gated TFTs...

  • Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates. Zhu, Z.-T.; Menard, E.; Hurley, K.; Nuzzo, R. G.; Rogers, J. A. // Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p133507 

    Free-standing micro/nanoelements of single-crystal silicon with integrated doped regions for contacts provide a type of material that can be printed onto low-temperature device substrates, such as plastic, for high-performance mechanically flexible thin-film transistors (TFTs). We present simple...

  • Microwave thin-film transistors using Si nanomembranes on flexible polymer substrate. Yuan, Hao-Chih; Ma, Zhenqiang // Applied Physics Letters;11/20/2006, Vol. 89 Issue 21, p212105 

    Large-feature-size single-crystal Si thin-film transistors (TFTs) with fT of 1.9 GHz and fmax of 3.1 GHz were demonstrated on flexible polymer substrate. In this letter, the authors detail the fabrication process that enables TFTs, made on low-temperature flexible substrates, to operate at...

  • Inkjet printing of single-walled carbon nanotube thin-film transistors patterned by surface modification. Nobusa, Yuki; Yomogida, Yohei; Matsuzaki, Satoki; Yanagi, Kazuhiro; Kataura, Hiromichi; Takenobu, Taishi // Applied Physics Letters;10/31/2011, Vol. 99 Issue 18, p183106 

    In this paper, we report a method for the inkjet printing of single-walled carbon nanotube thin-film transistors (SWCNT TFTs). Although inkjet technology is a powerful tool for the fabrication of SWCNT TFTs, the diameter of the ink droplets (100 μm) strictly limits the device size. Here, we...

  • Influence of lateral crystallization on gate oxide in polycrystalline silicon thin-film transistors. Kang, Il-Suk; Han, Shin-Hee; Joo, Seung-Ki // Applied Physics Letters;11/26/2007, Vol. 91 Issue 22, p222113 

    The phase transformation in a film influences its surrounding. In order to remove influences on gate oxide caused by metal-induced unilateral crystallization, a gate was formed after a lateral crystallization. The thin-film transistor (TFT) by the novel fabrication method was shown to have a...

  • Laser induced implanted oxide (LI[sup 2]Ox) and polycrystalline silicon film simultaneously.... Cheol-Min Park; Byung-Hyuk Min // Applied Physics Letters;1/20/1997, Vol. 70 Issue 3, p372 

    Proposes a method in forming the gate oxide and recrystallizing the polycrystalline silicon (poly-Si) active layer simultaneously. Characteristics of poly-Si thin film transistors; Discussion on the recrystallization of poly-Si film during irradiation of excimer lasers; Injection of oxygen ion...

  • Polycrystalline Si thin-film transistors fabricated at ≤800 °C: Effects of grain size and {110} fiber texture. Kung, K. T.-Y.; Reif, R. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1503 

    Examines the effects of enlarged grain size and enhanced {110} fiber texture on polycrystalline silicon (Si) thin film transistors (TFT) performance. Information on the technical applications of polycrystalline Si TFT; Techniques that can be used in reducing grain-boundary effects; Details of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics