TITLE

Stable transistors in hydrogenated amorphous silicon

AUTHOR(S)
Shannon, J. M.
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p326
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin-film field-effect transistors in hydrogenated amorphous silicon are notoriously unstable due to the formation of silicon dangling bond trapping states in the accumulated channel region during operation. Here, we show that by using a source-gated transistor a major improvement in stability is obtained. This occurs because the electron quasi-Fermi level is pinned near the center of the band in the active source region of the device and strong accumulation of electrons is prevented. The use of source-gated transistors should enable stable analog circuits to be made in amorphous silicon.
ACCESSION #
13719760

 

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