Signatures of quantum transport in self-assembled epitaxial nickel silicide nanowires

Lin, J.-F.; Bird, J. P.; He, Z.; Bennett, P. A.; Smith, D. J.
July 2004
Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p281
Academic Journal
We have measured the electrical properties of self-assembled epitaxial NiSi2 nanowires (NWs) formed on Si substrates. We find quantum corrections due to weak antilocalization and electron–electron interactions. Analysis of the magnetoresistance indicates that electron phase coherence in the NWs is limited by Nyquist dephasing below 10 K, and by electron–phonon scattering at higher temperatures. The phase-breaking and spin–orbit scattering lengths are found to be ∼45 nm and 3–7 nm, at 4.2 K, respectively, similar to reports for thin NiSi2 films.


Related Articles

  • Orientation dependence of nickel silicide formation in contacts to silicon nanowires. Dellas, N. S.; Liu, B. Z.; Eichfeld, S. M.; Eichfeld, C. M.; Mayer, T. S.; Mohney, S. E. // Journal of Applied Physics;May2009, Vol. 105 Issue 9, p094309 

    The orientation dependence of Ni silicide phase formation in the silicidation of silicon nanowires (SiNWs) by Ni has been studied. SiNWs with a [112] growth direction contacted by Ni pads form θ-Ni2Si for annealing conditions from 350 to 700 °C for 2 min. The θ-Ni2Si has an epitaxial...

  • Window size effect on lateral growth of nickel silicide. Singh, Awatar; Khokle, W. S.; Prudenziati, M.; Majni, G.; Morten, B. // Journal of Applied Physics;8/1/1989, Vol. 66 Issue 3, p1190 

    Presents a study which examined the window size effect on lateral growth of nickel silicide in contact windows cut into oxide grown on silicon. Experimental details; Results and discussion; Conclusion.

  • Epitaxial growth of manganese silicide nanowires on Si(111)-7×7 surfaces. Zou, Z.-Q.; Wang, H.; Wang, D.; Wang, Q.-K.; Mao, J.-J.; Kong, X.-Y. // Applied Physics Letters;3/26/2007, Vol. 90 Issue 13, p133111 

    Reactive epitaxial growth of manganese silicide on a Si(111)-7×7 surface at low coverage is studied using scanning tunneling microscopy. Besides tabular and three-dimensional islands observed previously on the Mn/Si system, Mn silicide is found to form nanowires (NWs) on the Si(111)-7×7...

  • Self-assembled thulium silicide nanostructures on silicon(001) studied by scanning tunneling microscopy and transmission electron microscopy. Zhang, J.; Crimp, M. A.; Cui, Y.; Nogami, J. // Journal of Applied Physics;Mar2008, Vol. 103 Issue 6, p064308 

    Since the formation of epitaxial silicide nanowires by deposition of rare earth (RE) metals on Si(001) was first discovered, intense interest has been focused on their growth mechanism. Unlike many of the other nanowire forming RE metals, which have several different polymorphic silicides at...

  • Fabrication of iron silicide nanowires from nanowire templates. Yamamoto, Keiichi; Kohno, Hideo; Takeda, Seiji; Ichikawa, Satoshi // Applied Physics Letters;8/21/2006, Vol. 89 Issue 8, p083107 

    The authors demonstrate that Fe silicide nanowires can be fabricated from vapor-liquid-solid grown Si nanowire templates. By heating simple Si nanowires with Fe, Fe infuses into Si nanowires through a surface oxide layer and Si nanowires are converted to α-FeSi2 or...

  • Interaction effects in high-mobility two-dimensional systems. Savchenko, A. K.; Galaktionov, E. A.; Safonov, S. S.; Proskuryakov, Y. Y.; Li, L.; Pepper, M.; Simmons, M. Y.; Ritchie, D. A.; Linfield, E. H.; Kvon, Z. D. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p491 

    We study electron-electron interaction mediated by impurities in the ballistic and intermediate regimes: 0.1 < kBT τ/h < 10, where τ is the momentum relaxation time. The interaction correction is shown to contribute to the ‘metallic’ ρ(T) of a 2DHG in GaAs and a 2DEG in...

  • Double-Electron Ionization of a Quantum System in a Laser Field: Rescattering and Interparticle Correlations. Volkova, E. A.; Popov, A. M.; Tikhonova, O. V. // Journal of Experimental & Theoretical Physics;Oct2000, Vol. 91 Issue 4, p706 

    Double-electron ionization of a model two-electron quantum system, describing a one-dimensional negative hydrogen ion, by a high-intensity laser pulse is investigated by direct numerical integration of the nonstationary Schrödinger equation. The possibility of interpreting the data obtained...

  • Observation of crossover from weak localization to antilocalization in the temperature dependence of the resistance of a two-dimensional system with spin-orbit interaction. Dorozhkin, S.; Kapustin, A.; Murzin, S. // JETP Letters;Apr2013, Vol. 97 Issue 3, p149 

    A nonmonotonic temperature dependence of the resistance with a maximum in the temperature range of 2-4 K whose position depends on the hole density has been observed in hole channels of silicon field-effect transistors. The spin-orbit hole relaxation time and the temperature dependences of the...

  • Intermolecular electrostatic energies using density fitting. Cisneros, G. Andrés; Piquemal, Jean-Philip; Darden, Thomas A. // Journal of Chemical Physics;7/22/2005, Vol. 123 Issue 4, p044109 

    A method is presented to calculate the electron-electron and nuclear-electron intermolecular Coulomb interaction energy between two molecules by separately fitting the unperturbed molecular electron density of each monomer. This method is based on the variational Coulomb fitting method which...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics