TITLE

Strong enhancement of terahertz radiation from semiconductor surfaces using MgO hemispherical lens coupler

AUTHOR(S)
Nakajima, M.; Uchida, K.; Tani, M.; Hangyo, M.
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p191
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report an enhancement of terahertz radiation power from InAs surfaces excited by ultrashort laser pulses using an MgO hemispherical lens coupler. The power of the terahertz radiation from the InAs surface with the MgO lens coupler is 50 times larger than that from the InAs surface without the MgO lens coupler. The enhancement is explained mainly by the increase of the transmission efficiency of the THz wave from InAs to free space.
ACCESSION #
13719742

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics