TITLE

Quasisuperlattice storage: A concept of multilevel charge storage

AUTHOR(S)
Chang, T. C.; Yan, S. T.; Liu, P. T.; Chen, C. W.; Wu, H. H.; Sze, S. M.
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p248
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A concept of the quasisuperlattice storage has been demonstrated in this study. Under suitably operated voltage, two apparent states of charge storage can be distinguished. The memory effects are due to the multilevel storage in the quasisuperlattice. Also, the a-Si quantum wells provide a feasible design for the 2 bit per cell nonvolatile memory devices. The operation of the 2 bit per cell needs to be performed by Fowler–Nordheim tunneling instead of conventional channel hot electron injection. Additionally, the dual read operation of the source and drain sides for conventional SONOS 2 bit/cell device is not necessary, which simplifies the circuit design engineering.
ACCESSION #
13719732

 

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