Field-controlled domain-wall resistance in magnetic nanojunctions

Burton, J. D.; Kashyap, A.; Zhuravlev, M. Ye.; Skomski, R.; Tsymbal, E. Y.; Jaswal, S. S.; Mryasov, O. N.; Chantrell, R. W.
July 2004
Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p251
Academic Journal
The electrical resistance of a constrained domain wall in a nanojunction is investigated using micromagnetic modeling and ballistic conductance calculations. The nanojunction represents two ferromagnetic electrodes connected by a ferromagnetic wire of 10 nm in length and of a few nanometers in cross section. We find that the anisotropy of the electrodes favors a localization of the domain wall within the constriction (wire) revealing a positive domain-wall resistance. An applied magnetic field moves the domain wall toward one of the electrodes and reduces its width. This compression of the domain wall leads to a sizeable enhancement of the domain-wall resistance.


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