TITLE

Dotty enhancement for infrared sensors

PUB. DATE
June 2004
SOURCE
Engineer (00137758);6/25/2004, Vol. 293 Issue 7654, p13
SOURCE TYPE
Periodical
DOC. TYPE
Article
ABSTRACT
Examines the use of quantum dots to enhance infrared sensor technology. Evidence that devices with quantum dots could detect infrared light better at a lower cost; Tailoring of quantum dots for use in biomedical imaging, environmental sensors, optical amplifiers, transistors and tunnelling diodes.
ACCESSION #
13606064

 

Related Articles

  • Intraband absorption for InAs/GaAs quantum dot infrared photodetectors. Zhang, J.-Z.; Galbraith, I. // Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1934 

    Using the envelope function theory, intraband absorption is calculated for InAs/GaAs pyramidal quantum dots. The effects of the quantum dot geometry, such as the dot shape and the wetting layer (WL) thickness, and the coupling between the WL and bound states on the intraband transitions are...

  • A Photon-Activated Switch Detects Single Far-Infrared Photons. Fitzgerald, Richard // Physics Today;Mar2000, Vol. 53 Issue 3, p20 

    Details the detection of far-infrared region (FIR) at the single-photon using a novel detection mechanism in a quantum dot. Description of the device employed for FIR detection; Approaches to the photon-activated switch behavior; Other FIR detection schemes.

  • Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices. Asano, Tetsuya; Fang, Zhaoqiang; Madhukar, Anupam // Journal of Applied Physics;Apr2010, Vol. 107 Issue 7, p073111 

    Currently lattice mismatch strain-driven three-dimensional coherent island based quantum dots, dubbed self-assembled quantum dots (SAQDs), constitute the most developed class of quantum dots with successful applications to lasers and considerable potential for infrared detectors in the...

  • Uniformity assessment of key characteristics of quantum-dot infrared detectors: A prerequisite for focal plane arrays. Pal, D.; Towe, E. // Journal of Applied Physics;10/15/2006, Vol. 100 Issue 8, p084322 

    We have studied some key characteristics of individual InAs/GaAs quantum-dot infrared photodetectors in a linear array to assess their suitability for imaging applications. The dark current-voltage characteristics of the devices in the array are almost identical. Furthermore, the low-temperature...

  • Tuning In0.3Ga0.7As/GaAs multiple quantum dots for long-wavelength infrared detectors. Chua, Ying Chao; Decuir Jr., E. A.; Passmore, B. S.; Sharif, K. H.; Manasreh, M. O.; Wang, Z. M.; Salamo, G. J. // Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p1003 

    Optical absorption spectra of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dots were investigated using the optical absorption as a function of the number of In0.3Ga0.7As monolayers deposited using the molecular-beam epitaxy Stranski–Krastanow technique. The peak...

  • Study On Low Bias Avalanche Multiplication In Modulation Doped Quantum-Dot Infrared Photodetectors. Yong Hoon Kang; Uk Hyun Lee; Joon Ho Oum; Songcheol Hong // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1551 

    An avalanche gain mechanism of InAs/GaAs quantum dot infrared photodetector is presented. We observed a low voltage avalanche process from the modulation doped n-i-n quantum-dot infrared photodetector. This is due to the remained electrons at modulation doped region. © 2005 American Institute...

  • Nanoscale quantum dot infrared sensors with photonic crystal cavity. Posani, K. T.; Tripathi, V.; Annamalai, S.; Weisse-Bernstein, N. R.; Krishna, S.; Perahia, R.; Crisafulli, O.; Painter, O. J. // Applied Physics Letters;4/10/2006, Vol. 88 Issue 15, p151104 

    We report high performance infrared sensors that are based on intersubband transitions in nanoscale self-assembled quantum dots combined with a microcavity resonator made with a high-index-contrast two-dimensional photonic crystal. The addition of the photonic crystal cavity increases the...

  • Effects of Si doping on normal incidence InAs/In0.15Ga0.85As dots-in-well quantum dot infrared photodetectors. Attaluri, R. S.; Annamalai, S.; Posani, K. T.; Stintz, A.; Krishna, S. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p083105 

    The effects of doping on InAs/In0.15Ga0.85As quantum dots-in-well infrared photodetectors have been studied by measuring the dark current, photocurrent, and spectral response. A significant reduction of dark current with decrease in doping concentration in the quantum dots has been observed....

  • Quantum dot infrared photodetectors: Interdot coupling. Apalkov, Vadim // Journal of Applied Physics;10/1/2006, Vol. 100 Issue 7, p076101 

    We report on our study of the effects of interdot coupling on the properties of quantum dot infrared photodetectors. The main effect we address here is the splitting of the optical absorption of coupled quantum dots due to electron hopping between the dots. The splitting depends on the size of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics