TITLE

Wavelength conversion in silicon using Raman induced four-wave mixing

AUTHOR(S)
Raghunathan, V.; Claps, R.; Dimitropoulos, D.; Jalali, B.
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/5/2004, Vol. 85 Issue 1, p34
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Conversion of digital- and analog-modulated optical signals from the 1550 nm band to the 1300 nm band is demonstrated in silicon waveguides. The conversion is based on parametric Stokes to anti-Stokes coupling using the Raman susceptibility of silicon.
ACCESSION #
13605593

 

Related Articles

  • A continuous-wave Raman silicon laser. Haisheng Rong; Jones, Richard; Ansheng Liu; Cohen, Oded; Hak, Dani; Fang, Alexander; Paniccia, Mario // Nature;2/17/2005, Vol. 433 Issue 7027, p725 

    Achieving optical gain and/or lasing in silicon has been one of the most challenging goals in silicon-based photonics because bulk silicon is an indirect bandgap semiconductor and therefore has a very low light emission efficiency. Recently, stimulated Raman scattering has been used to...

  • Distributed Raman amplification speeds communication. Ania-Castañón, Juan Diego; Turitsyn, Sergei K.; Chernikov, Stanislav // Laser Focus World;Jun2006, Vol. 42 Issue 6, p79 

    The article reports on the capability of distributed Raman fiber amplification in speeding fiberoptic communication. Rare-earth-doped fiber Raman lasers can reach powers of tens and even hundreds of watts with recent advances. Raman lasers can generate ultra-short pulses in the femtosecond...

  • Pump-probe experiments at 1.54 μm on silicon-rich silicon oxide waveguides. Forcales, M.; Smith, N. J.; Elliman, R. G. // Journal of Applied Physics;7/1/2006, Vol. 100 Issue 1, p014902 

    Optical pump-probe measurements were performed on slab waveguides containing excess silicon in the form of nanoclusters or nanocrystals and erbium. The measurements were performed by prism coupling a 1.54 μm probe beam into a waveguide formed by silicon-rich oxide and monitoring its intensity...

  • Optically Pumped Silicon Lases in the A Near-Infrared. Wilson, Mark // Physics Today;Apr2005, Vol. 58 Issue 4, p19 

    Presents information on the exploitation of the Raman effect in silicon in order to shift the wavelength of incident light and amplify the scattered light in an optical cavity. Silicon components developed by researchers throughout the 1990s; Strategies that have adopted by researchers to...

  • The effect of hydrogen on the network disorder in hydrogenated amorphous silicon. Gupta, S.; Katiyar, R. S.; Morell, G.; Weisz, S. Z.; Balberg, I. // Applied Physics Letters;11/1/1999, Vol. 75 Issue 18, p2803 

    Previous Raman scattering studies of the effect of hydrogen on the atomic network disorder in various hydrogenated amorphous silicon (a-Si:H) materials resulted in contradicting conclusions. We resolve these contradictions by showing that the surface and the bulk of a-Si:H films can behave...

  • Effects in synergistic blistering of silicon by coimplantation of H, D, and He ions. Moutanabbir, O.; Terreault, B. // Applied Physics Letters;1/31/2005, Vol. 86 Issue 5, p051906 

    Silicon blistering was achieved at unprecedently low ion fluences of 2×1015 He/cm2 (8 keV) followed by 6×1015 H/cm2 (5 keV), but no blistering occurs for reversed order (H+He), or (He+D) coimplantation up to a high fluence. Raman scattering data suggest that: (i) the He synergy is due to...

  • Raman spectroscopy of self-assembled Ge islands on Si. Yang, T. R.; Dvoynenko, M. M.; Feng, Z. C.; Cheng, H. H. // European Physical Journal B -- Condensed Matter;Jan2003, Vol. 31 Issue 1, p41 

    : We present a Raman scattering study for self-organized Ge dots on Si substrate. By means of difference Raman spectroscopy technique, we have separated the Raman signals from the Ge islands and Si substrate. The wetting layer thickness and strain were estimated from the line width and peak...

  • The effect of Si-nanocrystal size distribution on Raman spectrum. Ke, Weiwei; Feng, Xue; Huang, Yidong // Journal of Applied Physics;Apr2011, Vol. 109 Issue 8, p083526 

    The effect of Si-nanocrystal (Si-nc) size distribution on Raman spectrum is studied in detail within the framework of a phonon confinement model. It is found that size distribution has little effect on Raman frequency shift, but greatly affects the width and shape of Raman spectrum. Si-nc Raman...

  • On-chip surface-enhanced Raman scattering detection using integrated liquid-core waveguides. Measor, Philip; Seballos, Leo; Yin, Dongliang; Zhang, Jin Z.; Lunt, Evan J.; Hawkins, Aaron R.; Schmidt, Holger // Applied Physics Letters;5/21/2007, Vol. 90 Issue 21, p211107 

    The authors demonstrate surface-enhanced Raman scattering (SERS) detection on an optofluidic chip. Interconnected solid- and liquid-core antiresonant reflecting optical waveguides (ARROWs) form a planar beam geometry that allows for high mode intensities along microfluidic channels containing...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics