Memory effect of diamond in-plane-gated field-effect transistors

Sumikawa, Yu; Banno, Tokishige; Kobayashi, Kensaku; Itoh, Yutaka; Umezawa, Hitoshi; Kawarada, Hiroshi
July 2004
Applied Physics Letters;7/5/2004, Vol. 85 Issue 1, p139
Academic Journal
A memory effect of in-plane-gated field-effect transistors (IPGFETs) has been observed on hydrogen-terminated and oxygen-terminated diamond surfaces. The hysteresis characteristics are achieved by the hole traps in the oxygen-terminated surface of the IPGFETs where the threshold voltage shift by the gate voltage sweep is confirmed in the Id–Vg characteristics. This feature is observed under light illumination, and depends on the radiant flux density. The hysteresis characteristics become very small under the condition of no light irradiation at room temperature. It is assumed that carrier trap sites on the insulating part of IPGFET cause the hysteresis characteristics. Radiant flux enhances carrier migration.


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