TITLE

Exciton and biexciton luminescence from single hexagonal GaN/AlN self-assembled quantum dots

AUTHOR(S)
Kako, S.; Hoshino, K.; Iwamoto, S.; Ishida, S.; Arakawa, Y.
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/5/2004, Vol. 85 Issue 1, p64
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report single dot spectroscopy of hexagonal GaN/AlN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Through the reduction of the number of quantum dots using submicron mesa structures, we have obtained several isolated photoluminescence peaks emitted by individual quantum dots. With increasing excitation power, an additional peak emerges in the higher-energy side of an excitonic ground state. This additional peak shows quadratic power dependence, and is attributed to the photoluminescence from a biexciton state. The biexciton binding energy is negative and the magnitude is about 30 meV, which is explained by the effects of a strong built-in electric field.
ACCESSION #
13605576

 

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