Oxidation lift-off method for layer transfer of GaAs/AlAs-based structures

Oktyabrsky, S.; Katsnelson, A.; Tokranov, V.; Todt, R.; Yakimov, M.
July 2004
Applied Physics Letters;7/5/2004, Vol. 85 Issue 1, p151
Academic Journal
A method for layer transfer via attachment and release of GaAs-based components onto silicon platform in a single-step process (oxidation lift-off method) is proposed. The method involves moderate temperature (∼400°C) alloy bonding of GaAs devices with simultaneous removal of the GaAs substrate by lateral oxidation of sacrificial AlAs layer. Selectivity with respect to Al content is high enough to release the vertical cavity laser structures containing layers of AlxGa1-xAs with x=0.9. This characteristic of the oxidation process allows for the release of components and form oxide apertures during a single step. The technology can be employed for heterogeneous integration of various compound semiconductor devices with Si or other substrates.


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