Carbon nanotube p-n junction diodes

Lee, J.U.; Gipp, P.P.; Heller, C.M.
July 2004
Applied Physics Letters;7/5/2004, Vol. 85 Issue 1, p145
Academic Journal
We demonstrate a single-walled carbon nanotube p-n junction diode device. The p-n junction is formed along a single nanotube by electrostatic doping using a pair of split gate electrodes. By biasing the two gates accordingly, the device can function either as a diode or as an ambipolar field-effect transistor. The diode current–voltage characteristics show forward conduction and reverse blocking characteristics, i.e., rectification. For low bias conditions, the characteristics follow the ideal diode equation with an ideality factor close to one.


Related Articles

  • Photo-induced charge transport in ZnS nanocrystals decorated single walled carbon nanotube field-effect transistor. Rajesh; Sarkar, Tapan; Mulchandani, Ashok // Applied Physics Letters;10/24/2011, Vol. 99 Issue 17, p173110 

    We describe a photoresponse measurement study on a pyrene linked ZnS nanoparticles decorated single walled carbon nanotube (SWNT) field-effect transistor (FET). We observed that the photocurrent response in the system is based on the semiconducting property of the SWNT. It was found that both...

  • Fabrication and characterization of junctionless carbon nanotube field effect transistor for cholesterol detection. Barik, Md. Abdul; Dutta, Jiten Ch. // Applied Physics Letters;8/4/2014, Vol. 105 Issue 5, p1 

    We have reported fabrication and characterization of polyaniline (PANI)/zinc oxide (ZnO) membrane-based junctionless carbon nanotube field effect transistor deposited on indium tin oxide glass plate for the detection of cholesterol (0.5-22.2 mM). Cholesterol oxidase (ChOx) has been immobilized...

  • Performance analysis of carbon-based tunnel field-effect transistors for high frequency and ultralow power applications. Yoon, Youngki; Kim, Sung Hwan; Salahuddin, Sayeef // Applied Physics Letters;12/6/2010, Vol. 97 Issue 23, p233504 

    We perform atomistic simulations and energy-delay analysis on tunnel FETs (TFETs) based on partially unzipped carbon nanotubes (CNTs) and compare their performance against conventional homojunction CNT-TFETs. The device simulations show that the carbon heterojunctions could provide much larger...

  • Facile fabrication of suspended as-grown carbon nanotube devices. Sangwan, V. K.; Ballarotto, V. W.; Fuhrer, M. S.; Williams, E. D. // Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p113112 

    A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique is demonstrated by controlling the density of suspended...

  • High-performance short channel organic transistors using densely aligned carbon nanotube array electrodes. Sarker, Biddut K.; Khondaker, Saiful I. // Applied Physics Letters;1/9/2012, Vol. 100 Issue 2, p023301 

    We report high-performance short channel pentacene field effect transistor (FET) using carbon nanotube aligned array electrodes. The devices show field effect mobility of up to 0.65 cm2/Vs and current on-off ratio of up to 1.7 × 106, which is the best for sub-micron pentacene FETs. The...

  • Gate-Field-Induced Schottky Barrier Lowering in a Nanotube Field-Effect Transistor. Brintlinger, T.; Kim, B. M.; Cobas, E.; Fuhrer, M. S. // AIP Conference Proceedings;2004, Vol. 723 Issue 1, p520 

    We propose that in nanotube field effect transistors (FETs) with small effective dielectric thickness the vertical potential drop across the nanotube diameter at finite gate bias can lower or eliminate the Schottky barrier at the electrode. This effect is demonstrated in single-walled carbon...

  • Nano-scale organic FET fabricated with carbon nanotubes. Horiuchi, Kazunaga; Kato, Tomohiro; Michika; Mochizuki; Hashii, Shinobu; Hashimoto, Akira; Sasaki, Takahiko; Aoki, Nobuyuki; Ochiai, Yuichi // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1083 

    A nano-scale C60 field-effect transistor has been fabricated with carbon nanotubes (C60CN-FET). A rope of multi-walled carbon nanotubes has been anchored by metal pads and cut by a focused Ga2+ ion beam ablation. The ablated ends of the rope have been integrated as electrodes into the C60CN-FET,...

  • Comparison of sensitivities of carbon nanotube field-effect transistor biosensors with and without top metal gate. Abe, Masuhiro; Murata, Katsuyuki; Ataka, Tatsuaki; Matsumoto, Kazuhiko // Journal of Applied Physics;Nov2008, Vol. 104 Issue 10, p104304 

    The sensitivities of biosensors using top-gate-type carbon nanotube field-effect transistors (CNT-FETs) with and without a top metal gate were compared. The CNT-FET biosensor without the top metal gate (sensor I) showed about three times higher transconductance than the one with the top metal...

  • Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments. Kanbara, Takayoshi; Takenobu, Taishi; Takahashi, Tetsuo; Iwasa, Yoshihiro; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu; Kataura, Hiromichi // Applied Physics Letters;1/30/2006, Vol. 88 Issue 5, p053118 

    The contact resistance (Rcont) between nanotube and metal electrodes was directly measured in a four-terminal configuration of field-effect transistors for individual single-walled carbon nanotube (SWNT) bundles and a multiwalled carbon nanotube (MWNT). Both Rcont and the nanotube resistance...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics