TITLE

Growth mechanism difference of sputtered HfO2 on Ge and on Si

AUTHOR(S)
Kita, Koji; Kyuno, Kentaro; Toriumi, Akira
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/5/2004, Vol. 85 Issue 1, p52
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
HfO2 films were deposited by the reactive sputtering on Ge and Si substrates simultaneously, and we found both the interface layer and the HfO2 film were thinner on Ge substrate than those on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO2 film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before the reactive sputtering process. The role of metallic Hf in these phenomena is understandable by assuming the formation of a volatile Hf–Ge–O ternary compound at the early stage of the film growth. This result shows that the HfO2/Ge system has an advantage over the HfO2/Si system from the viewpoint of further reduction of the gate oxide film thickness.
ACCESSION #
13605565

 

Related Articles

  • Strained Si/strained Ge dual-channel heterostructures on relaxed Si[sub 0.5]Ge[sub 0.5] for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors. Lee, Minjoo L.; Fitzgerald, Eugene A. // Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4202 

    By growing heterostructures that combine a surface strained Si layer with a buried strained Ge layer on Si[sub 0.5]Ge[sub 0.5], we have fabricated metal-oxide-semiconductor field-effect transistors with mobility enhancement factors over bulk Si of 1.7–1.9 for electrons and 10–12...

  • Characteristics of sputtered Hf1-xSixO2/Si/GaAs gate stacks. Zhang, M. H.; Ok, I. J.; Kim, H. S.; Zhu, F.; Lee, T.; Thareja, G.; Yu, L.; Lee, Jack C. // Applied Physics Letters;7/24/2006, Vol. 89 Issue 4, p042902 

    Sputtered Hf1-xSixO2/Si/n-type GaAs gate stacks with x=0, 30%, and 47% have been characterized using x-ray photoelectron spectroscopy, photoluminescence, and capacitance-voltage (CV) measurements. Incorporating Si into HfO2 improves both frequency dispersion and hysteresis. Compared to HfO2, 30%...

  • Sematech Investigates Alternative MOSFET Materials.  // Electronic News;3/13/2006, Vol. 52 Issue 11, p45 

    The article reports on an investigation into alternative materials to silicon in metal oxide semiconductor field-effect transistor channels launched by Sematech. The investigation will focus on the applicability of silicon germanium and germanium as channel materials. The materials are suitable...

  • Optimum strain configurations for carrier injection in near infrared Ge lasers. Aldaghri, O.; Ikonic, Z.; Kelsall, R. W. // Journal of Applied Physics;Mar2012, Vol. 111 Issue 5, p053106 

    The behavior of direct and indirect valleys in Ge, and the bandgap shrinking, under different tensile-strain conditions in bulk Ge and Ge quantum well structures are explored using the deformation potential and k·p methods. The doping density required for filling the indirect valleys up to...

  • Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100). Roucka, Radek; Beeler, Richard; Mathews, Jay; Ryu, Mee-Yi; Kee Yeo, Yung; Menéndez, José; Kouvetakis, John // Journal of Applied Physics;May2011, Vol. 109 Issue 10, p103115 

    Previously developed methods used to grow Ge1-ySny alloys on Si are extended to Sn concentrations in the 1019-1020 cm-3 range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are...

  • Germanium Valley? Sperling, Ed // Electronic News;8/4/2003, Vol. 49 Issue 31, pN.PAG 

    Reports on the program to compare standard sub-45nm complementary metal oxide semiconductor devices on both silicon and germanium for high-performance devices, being set up by IMEC, a research house funded by the Belgian government and by private industry, as of August 2003. Advantage of...

  • Work function and thermal stability of Ti[sub 1-x]Al[sub x]N[sub y] for dual metal gate electrodes. Cha, Tae-Ho; Park, Dae-Gyu; Kim, Tae-Kyun; Jang, Se-Aug; Yeo, In-Seok; Roh, Jae-Sung; Park, Jin Won // Applied Physics Letters;11/25/2002, Vol. 81 Issue 22, p4192 

    Work function and thermal stability of reactive sputtered Ti[SUB1-x]-Al[SUBx]N[SUBy] films were investigated for a metal gate electrode using a metal-oxide-semiconductor (MOS) structure. It is found that the work function (Φ[SUBM]) values of Ti[SUB1-x]Al[SUBx]N[SUBy] are ranged from 4.36 to...

  • Effects of arsenic concentration profile in gate oxide on electric properties of metal–oxide–silicon devices. Chang-Liao, Kuei-Shu; Chuang, Ching-Sang // Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4171 

    The effects of arsenic concentration profiles in gate oxides on the electrical properties of metaloxide-silicon (MOS) capacitors were investigated. It is found that arsenic in the bulk of gate oxide degrades the electric property of MOS devices, which could be due to the electron traps...

  • Lack of universal one-parameter scaling in the two-dimensional metallic regime. Pudalov, V. M.; Brunthaler, G.; Prinz, A.; Bauer, G. // JETP Letters;9/10/98, Vol. 68 Issue 5, p442 

    The two-dimensional metallic state is studied in a number of Si-MOS structures with peak mobilities varying by a factor of 8.5. The data show a density dependence and disorder dependence of the major features of the scaling function and thus reveal the absence of universal one-parameter scaling...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics