Dielectric behavior and dependence of percolation threshold on the conductivity of fillers in polymer-semiconductor composites

Zhi-Min Dang; Ce-Wen Nan; Dan Xie; Yi-He Zhang; Tjong, S.C.
July 2004
Applied Physics Letters;7/5/2004, Vol. 85 Issue 1, p97
Academic Journal
Polymer-semiconductor PVDF/LNO (polyvinylidene fluoride/Li doped NiO) composites were fabricated via simple blending and hot-molding technique. The dielectric behavior of such composites was studied over broad frequency. The results revealed the dependence of percolation threshold on the conductivity of LNO filler in the composites. And the conductivity of the LNO fillers played an important role on the dielectric properties and critical exponents of the PVDF/LNO composites. High dielectric constants and low conductivities of the composites were observed near the percolation threshold. Finally, critical exponents were also used to explain the experimental results, and provided useful information for understanding the resultant dielectric properties.


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