Oscillating growth of surface roughness in multilayer films

Liu, Z.-J.; Shen, Y.G.
June 2004
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5121
Academic Journal
The surface and interface growth of binary multilayer films has been studied using nonlinear continuum theory. Numerical simulations show that the surface roughness of a multilayer film experiences an oscillating growth, with smoothing of the interface roughness existing at one type of interface and growth-induced roughening observed at another type of interface. Such interface smoothing and roughening effects are apparently related to the growth time of individual thin layers and consequently to the bilayer thickness. In particular, the change in the thickness ratio between adjacent layers shows a marked effect on the interface roughness. Our simulations also reveal that despite the existence of such an oscillating growth feature the surface roughness of a multilayer film almost exhibits an exponential dependence on the growth time and the scaling law found in the growth of single-layer films is also valid for multilayers.


Related Articles

  • Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition. Choi, C.-H.; Harper, R. A.; Yapsir, A. S.; Lu, T.-M. // Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p1992 

    We observed the growth of epitaxial Al(111) films on Si(111) at room temperature by the partially ionized beam deposition technique. The films were deposited in a conventional vacuum condition without in situ cleaning. The beam contained 0.3% of Al self-ions and a bias potential of 1 kV was...

  • In situ solid phase epitaxial growth of C49-TiSi[sub 2] on Si(111)-7X7 substrate. Chi Kyu Choi; Soo Jeong Yang; Jai Yon Ryu; Jeong Yong Lee; Hyung-Ho Park; Oh Joon Kwon; Yong Pak Lee; Kun Ho Kim // Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p485 

    Examines the epitaxial growth of C49-TiSi[sub 2] films on silicon (111) substrate. Effect of in situ annealing on titanium film deposition on silicon(111)-7x7 surface; Characterization of silicide phase through x-ray diffraction and Auger electron spectroscopy; Physical properties of...

  • Structure, bonding, and band offsets of (100)SrTiO[sub 3]–silicon interfaces. Peacock, P.W.; Robertson, J. // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5497 

    We derive rules for bonding at interfaces between Si and ionic oxides so that they satisfy valence requirements and give a defect-free interface. These rules are used to analyze epitaxial interfaces of SrTiO[sub 3] on (100)Si. The band offsets are found from the local density of states and it is...

  • Effect of nitrogen on the optical and transport properties of Ga[sub 0.48]In[sub 0.52]N[sub y]P[sub 1-y] grown on GaAs(001) substrates. Hong, Y.G.; Nishikawa, A.; Tu, C.W. // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5446 

    We report gas-source molecular-beam epitaxy of Ga[sub 1-x]In[sub x]N[sub y]P[sub 1-y] grown on GaAs(100) substrates. Nitrogen incorporation dramatically reduces the Ga[sub 1-x]In[sub x]P band gap. With nitrogen incorporation, the photoluminescence (PL) peak energy exhibits an inverted S-shaped...

  • Thermal diffusivity and thermoelectric figure of merit of Al[sub 1-x]In[sub x]N prepared by reactive radio-frequency sputtering. Yamaguchi, Shigeo; Izaki, Ryohei; Yamagiwa, Ken-ichi; Taki, Kyoichiro; Iwamura, Yasuo; Yamamoto, Atsushi // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5398 

    We studied the thermal properties of AlN, InN, and Al[sub 1-x]In[sub x]N films, prepared by reactive sputtering, as a function of the temperature. The results indicated minimum thermal diffusivities of 3.14×10[sup -6] m[sup 2]/s for AlN, 7.65×10[sup -7] m[sup 2]/s for InN,...

  • Epitaxial growth and ferroelectric properties of SrBi[sub 2]Nb[sub 2]O[sub 9](115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode. Duclère, J.-R.; Guilloux-Viry, M.; Bouquet, V.; Perrin, A.; Cattan, E.; Soyer, C.; Rémiens, D. // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5500 

    Epitaxial SrBi[sub 2]Nb[sub 2]O[sub 9] thin films have been grown by pulsed-laser deposition on Pt(111) bottom electrode epitaxially grown by dc sputtering on sapphire(0001). Four-circle x-ray diffraction reveals the epitaxial growth of the SrBi[sub 2]Nb[sub 2]O[sub 9](115)/Pt(111) bilayers. The...

  • Lateral epitaxial growth of (Ba,Sr)TiO[sub 3] thin films. Jang-Sik Lee, J.; Wang, H.; Sang Yeol Lee; Foltyn, S.R.; Jia, Q.X. // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5494 

    We report a technique for epitaxial thin-film growth by combination of selective heteroepitaxial and lateral homoepitaxial growth. (Ba,Sr)TiO[sub 3] (BST) thin films were deposited on LaAlO[sub 3] having amorphous SiO[sub x] masking layers with stripe patterns at 450 °C by pulsed-laser...

  • Electronic structures and the estimated Curie temperatures of (Ga[sub 1-y]In[sub y])[sub 1-x]Mn[sub x]As. Miura, K.; Iwasawa, M.; Imanaga, S.; Ami, T. // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5491 

    The electronic structures of (Ga[sub 1-y]In[sub y])[sub 1-x]Mn[sub x]As have been investigated using the Korringa, Kohn and Rostoker (KKR) method with the coherent potential approximation (CPA). The estimated Curie temperature (T[sub C]) of Ga[sub 1-x]Mn[sub x]As is higher than that of (Ga[sub...

  • Ferromagnetism in cobalt-implanted ZnO. Morton, D.P.; Overberg, M.E.; Pearton, S.J.; Pruessner, K.; Budai, J.D.; Boatner, L.A.; Chisholm, M.F.; Lee, J.S.; Khim, Z.G.; Park, Y.D.; Wilson, R.G. // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5488 

    The magnetic and structural properties of cobalt-implanted ZnO single crystals are reported. High-quality, (110)-oriented single-crystal Sn-doped ZnO substrates were implanted at ∼350 °C with Co to yield transition metal concentrations of 3–5 at. % in the near-surface (∼2000...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics