Nanomechanical defect imaging in premetal dielectrics for integrated circuits

Muthuswami, L.; Geer, R.E.
June 2004
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5082
Academic Journal
Ultrasonic force microscopy (UFM) has been used for cross-sectional nanomechanical imaging of integrated circuit trenches filled with hydrogen silsesquioxane (HSQ) premetal dielectric. Fully cured HSQ exhibits a local Young’s modulus of 55±2 GPa calibrated against SiO2. UFM reveals local areas within the HSQ with dramatically reduced modulus exhibiting poor resistance to hydrofluoric acid etching, indicative of incomplete densification during curing. Quantitative UFM analysis reveals a modulus of 28±2 GPa at the defect centers. This agrees quantitatively with predictions from recent finite element models of siloxane-based dielectrics in conjunction with relative density measurements of similar defects via transmission electron microscopy. © 2004 American Institute of Physics.


Related Articles

  • Interface engineering for high interfacial strength between SiCOH and porous SiCOH interconnect dielectrics and diffusion caps. Grill, A.; Edelstein, D.; Lane, M.; Patel, V.; Gates, S.; Restaino, D.; Molis, S. // Journal of Applied Physics;Mar2008, Vol. 103 Issue 5, p054104 

    The integration of low- and ultralow-k SiCOH dielectrics in the interconnect structures of very large scale integrated chips involves complex stacks with multiple interfaces. Successful fabrication of reliable chips requires strong adhesion between the different layers of the stacks. A critical...

  • Switched Interconnects Can Solve Complex Data Flows. Gravel, Alain // Product Design & Development;May2005, Vol. 60 Issue 5, p12 

    The article presents information on switch interconnects. A switch interconnect device is composed of a number of interfaces, which have the speed and channelization characteristics of their corresponding interconnect standard, all leading into a switch fabric that interconnects all of the...

  • Improved amplifier drives differential-input ADCs. Travis, Bill; Goldstein, Stephan // EDN;1/10/2002, Vol. 47 Issue 1, p80 

    Focuses on the role of differential outputs in providing simple interface towards a differential input ADC. Ways to create a differential-input instrumentation amplifier; Characteristics of the circuits; Need of compatible resistors.

  • Characterization and modeling of the nitrogen passivation of interface traps in SiO[sub 2]/4H–SiC. McDonald, K.; Weller, R. A.; Pantelides, S. T.; Feldman, L. C.; Chung, G. Y.; Tin, C. C.; Williams, J. R. // Journal of Applied Physics;3/1/2003, Vol. 93 Issue 5, p2719 

    The relationship between nitrogen content and interface trap density (D[sub it]) in SiO[sub 2]/4H-SiC near the conduction band has been quantitatively determined. Nitridation using NO significantly reduces D[sub it] near the conduction band, but the effect saturates after ≈2.5 × 10[sup...

  • Stress analysis of encapsulated fine-line aluminum interconnect. Jones, Robert E.; Basehore, Michael L. // Applied Physics Letters;3/23/1987, Vol. 50 Issue 12, p725 

    Mechanical stresses are known to cause hillock formation and creep voids in aluminum based interconnect on integrated circuits. While the effects of differential thermal expansion between an aluminum film and a silicon substrate are well known, the effects on an encapsulated narrow aluminum line...

  • Photoemission from the Sr/Si(001) interface. Herrera-Go´mez, A.; Aguirre-Tostado, F. S.; Sun, Y.; Pianetta, P.; Yu, Z.; Marshall, D.; Droopad, R.; Spicer, W. E. // Journal of Applied Physics;12/15/2001, Vol. 90 Issue 12, p6070 

    The growth of Sr on n-type Si(001) was studied in detail for coverages between 0 and 1 monolayer (ML) using core level photoemission spectroscopy. In a similar manner, the Sr saturation coverage was studied in the 600–925 °C temperature range. Data analysis was carried out by a method...

  • Interfacial characteristics and band alignments for ZrO2 gate dielectric on Si passivated p-GaAs substrate. Dalapati, Goutam Kumar; Sridhara, Aaditya; Wong, Andrew See Weng; Chia, Ching Kean; Lee, Sung Joo; Chi, Dongzhi // Applied Physics Letters;12/10/2007, Vol. 91 Issue 24, p242101 

    The interfacial characteristics and band alignments of high-k ZrO2 on p-GaAs have been investigated by using x-ray photoelectron spectroscopy and electrical measurements. It has been demonstrated that the presence of Si interfacial passivation layer (IPL) improves GaAs metal-oxide-semiconductor...

  • Interface characterization of nanoscale laminate structures on dense dielectric substrates by x-ray reflectivity. Travaly, Y.; Schuhmacher, J.; Hoyas, A. M.; Van Hove, M.; Maex, K.; Abell, T.; Sutcliffe, V.; Jonas, A. M. // Journal of Applied Physics;4/15/2005, Vol. 97 Issue 8, p084316 

    On nanoscale laminate structures, the interface cannot be identified any longer as the separation between two films of bulk materials. The formation of the interface defines the final composition and structure of the laminate structure. As such, the characterization of the interface becomes an...

  • Low Loss Nanophotonic Waveguides and Ring Resonators in Silicon-on-Insulator. Baets, Roel; Bogaerts, Wim; Taillaert, Dirk; Dumon, Pieter; Bienstman, Peter; Van Thourhout, Dries; Van Campenhout, Joris; Wiaux, Vincent; Wouters, Johan; Beckx, Stephan // AIP Conference Proceedings;2004, Vol. 709 Issue 1, p308 

    High index contrast, wavelength-scale structures are the key to ultra-compact integration of photonic integrated circuits. We discuss the general properties of these nanophotonic components and the rationale for using them. We studied the fabrication of these structures in the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics