Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers

Lin, C.; Grau, M.; Dier, O.; Amann, M.-C.
June 2004
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5088
Academic Journal
3.04 μm emission has been achieved in GaInAsSb/AlGaAsSb double-quantum-well ridge waveguide diode lasers in continuous-wave mode up to 20 °C. A threshold current density of 343 A/cm2 was recorded from a laser with 2 mm cavity length and 30 μm ridge width in pulsed-mode operation. A characteristic temperature of 30 K was measured from a 1.2 mm long device. Threshold current densities and characteristic temperatures of GaInAsSb/AlGaAsSb laser diodes with wavelengths from 2.24 to 3.04 μm are summarized. The threshold current density per quantum well increases strongly with wavelength; at 3.04 μm, it is three times that value of a 2.24 μm device. © 2004 American Institute of Physics.


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