Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process

Xuan, Y.; Hojo, D.; Yasuda, T.
June 2004
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5097
Academic Journal
We report electrical properties of hafnium silicate films prepared in an atomic layer deposition mode using Hf(OtC4H9)4 and Si(OC2H5)4 precursors. Film deposition was carried out at room temperature using the vapor–liquid hybrid deposition technique. The C–V curve of the metal–oxide–semiconductor capacitor fabricated by postdeposition anneal and Au electrode evaporation shows good agreement with the theoretical one except for a positive flatband voltage shift of 0.2–0.3 V. The leakage current density was four orders of magnitude lower than SiO2 reference data in the equivalent-oxide-thickness range of <2.5 nm. © 2004 American Institute of Physics.


Related Articles

  • Gate oxide induced switch-on undershoot current observed in thin-film transistors. Yan, Feng; Migliorato, Piero; Hong, Yi; Rana, V.; Ishihara, R.; Hiroshima, Y.; Abe, D.; Inoue, S.; Shimoda, T. // Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p253504 

    The transient drain current of the single-grain silicon thin-film transistor with gate oxide deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition has been measured by applying a square signal on the gate and a constant low voltage between source and drain....

  • Two-dimensional growth of continuous Cu2O thin films by magnetron sputtering. Yin, Z. G.; Zhang, H. T.; Goodner, D. M.; Bedzyk, M. J.; Chang, R. P. H.; Sun, Y.; Ketterson, J. B. // Applied Physics Letters;2/7/2005, Vol. 86 Issue 6, p061901 

    We present results on the in situ, two-dimensional growth (as opposed to the more commonly encountered island-coalescence mechanism) of continuous epitaxial Cu2O films on MgO(011) using dc facing-magnetron sputtering from metallic Cu targets in an oxygen/argon atmosphere. Film growth was studied...

  • Epitaxial BiFeO3 thin films fabricated by chemical solution deposition. Singh, S. K.; Kim, Y. K.; Funakubo, H.; Ishiwara, H. // Applied Physics Letters;4/17/2006, Vol. 88 Issue 16, p162904 

    Epitaxial BiFeO3 (BFO) thin films were fabricated on (001)-, (110)-, and (111)-oriented single-crystal SrRuO3(SRO)/SrTiO3(STO) structures by chemical solution deposition. X-ray diffraction indicates the formation of an epitaxial single-phase perovskite structure and pole figure measurement...

  • Ferroelectric (Pb,Sr)TiO3 epitaxial thin films on (001) MgO for room temperature high-frequency tunable microwave elements. Liu, S. W.; Weaver, J.; Yuan, Z.; Donner, W.; Chen, C. L.; Jiang, J. C.; Meletis, E. I.; Chang, W.; Kirchoefer, S. W.; Horwitz, J.; Bhalla, A. // Applied Physics Letters;10/3/2005, Vol. 87 Issue 14, p142905 

    Ferroelectric Pb0.35Sr0.65TiO3 (PSTO) thin films were grown on (001) MgO by using pulsed laser deposition. Microstructure studies from x-ray diffraction and electron microscopy indicate that the as-grown PSTO films have excellent single crystal quality and good epitaxial behavior with their...

  • Air-stable ambipolar organic thin-film transistors based on an organic homostructure. Ye, Rongbin; Baba, Mamoru; Oishi, Yoshiyuki; Mori, Kunio; Suzuki, Kazunori // Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p253505 

    Ambipolar organic thin-film transistors (TFTs) based on a fluorinated copper phthalocyanine (F16CuPc)/copper phthalocyanine (CuPc) homostructure layer were fabricated and characterized. The homostructure TFTs showed typical air-stable ambipolar characteristics, with hole and electron mobilities...

  • Characteristics of HfO2 thin films grown by plasma atomic layer deposition. Jinwoo Kim; Seokhoon Kim; Hyeongtag Jeon; Cho, M.-H.; Chung, K.-B.; Bae, Choelhwyi // Applied Physics Letters;8/1/2005, Vol. 87 Issue 5, p053108 

    The characteristics of HfO2 films grown on Si substrates using a tetrakis-diethyl-amino-hafnium precursor by the remote plasma atomic layer deposition (RPALD) and direct plasma ALD (DPALD) methods were investigated by physical and electrical measurement techniques. The as-deposited HfO2 layer...

  • Preparation and characterization of Au/SiO2 multilayer composite films with nonspherical Au particles. Liao, H. B.; Wen, W.; Wong, G. K. L. // Applied Physics A: Materials Science & Processing;2005, Vol. 80 Issue 4, p861 

    Au/SiO2 multilayer composite films containing nonspherical Au particles were prepared by a magnetron sputtering method. Uniform size and shape distributions of Au particles were obtained in these films. Au particles embedded in these films can be shaped into spheres or ellipsoids by controlling...

  • Interface-related thickness dependence of the tunability in BaSrTiO3 thin films. Ellerkmann, U.; Liedtke, R.; Boettger, U.; Waser, R. // Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4708 

    The thickness dependence of the tunability of Ba0.7Sr0.3TiO3 thin films is investigated. The capacitance-voltage curves, revealing the tunability of the films with thickness from 30 to 370 nm, show a strong thickness dependence. This is attributed to a bias-independent interface capacity. The...

  • Interlayer composition of HfO2/Si(001) films. Copel, M.; Reuter, M.C.; Jamison, P. // Applied Physics Letters;7/19/2004, Vol. 85 Issue 3, p458 

    We report medium energy ion scattering results that determine the extent of Hf incorporation in the interfacial region of HfO2/Si(001) films. The lack of change in the Hf backscatter peak after interlayer growth by in situ oxidation indicates extremely low levels of Hf incorporation. We conclude...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics