TITLE

Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process

AUTHOR(S)
Xuan, Y.; Hojo, D.; Yasuda, T.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5097
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report electrical properties of hafnium silicate films prepared in an atomic layer deposition mode using Hf(OtC4H9)4 and Si(OC2H5)4 precursors. Film deposition was carried out at room temperature using the vapor–liquid hybrid deposition technique. The C–V curve of the metal–oxide–semiconductor capacitor fabricated by postdeposition anneal and Au electrode evaporation shows good agreement with the theoretical one except for a positive flatband voltage shift of 0.2–0.3 V. The leakage current density was four orders of magnitude lower than SiO2 reference data in the equivalent-oxide-thickness range of <2.5 nm. © 2004 American Institute of Physics.
ACCESSION #
13538782

 

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