TITLE

Resonant two-photon photoemission in quantum-well infrared photodetectors

AUTHOR(S)
Maier, Thomas; Schneider, Harald; Walther, Martin; Koidl, Peter; Hui Chun Liu
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5162
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the nonlinear behavior of quantum-well infrared photodetectors with three energetically equidistant energy levels. The giant resonant nonlinearity leads to a quadratic power dependence of the photocurrent down to excitation power densities as low as 0.1 W/cm2. Using these highly sensitive two-photon detectors, second-order autocorrelation measurements of ultrashort midinfrared laser pulses in the pJ regime are demonstrated. The dynamical behavior is studied by a numerical analysis of these measurements. At high bias voltages we observe a dominating linear contribution to the photocurrent arising from tunneling processes.
ACCESSION #
13538775

 

Related Articles

  • High mobility oxides: Engineered structures to overcome intrinsic performance limitations of transparent conducting oxides. Robbins, Joshua J.; Wolden, Colin A. // Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p3933 

    After a decade of intensive materials discovery and optimization, no single transparent conducting oxide has exceeded the intrinsic electrical performance limits suggested in 1992. High mobility oxide (HMO) structures are proposed as an alternative design that can surpass single material...

  • Resonant electron tunneling in ZnSe/BeTe double-barrier, single-quantum-well heterostructures. Lunz, U.; Keim, M.; Reuscher, G.; Fischer, F.; Schüll, K.; Waag, A.; Landwehr, G. // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6329 

    Presents a study which observed resonant tunneling through zinc selenide/beryllium telluride double-barrier, single-quantum well structures. Details on the photoluminescence technique; Description of the conduction band diagram of the double barrier; Measurement of the current voltage function.

  • Dilute Nitride Ga(AsN) Alloys: an Unusual Band Structure Probed by Magneto-Tunneling. Patanè, A.; Endicott, J.; Ibáñez, J.; Eaves, L.; Hopkinson, M. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p267 

    We describe our recent investigations into the nature of the electronic states in GaAs1-yNy, quantum wells. At low y (∼ 0.1%) our magneto-tunneling experiments allow us to map out the form of the energy-wavevector dispersion curves of the hybridized subbands of the GaAs1-yNy layer, which...

  • Time dependent model of resonant tunneling in multiple-wide-quantum-well structures with homogeneous and nonhomogeneous interfaces. Murzin, V. N.; Shchurova, L. Yu.; Mityagin, Yu. A. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p589 

    A time-dependent approach is applied to the problem of dissipative resonant electron tunneling in asymmetric double-quantum-well systems both with ideal flat and large-scale disorder interfaces. An electron tunneling rate associated with LO-phonon scattering and the average effective tunneling...

  • Resonant tunneling through a HgTe/Hg1-xCdxTe double barrier, single quantum well heterostructure. Reed, M. A.; Koestner, R. J.; Goodwin, M. W. // Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1293 

    Resonant tunneling has been demonstrated through a double barrier, single quantum well HgTe/Hg1-xCdxTe heterostructure for the first time. Negative differential resistance is observable at room temperature, exhibiting a 1.4:1 peak to valley tunnel current ratio. The observation provides direct...

  • Resonant tunneling and negative differential resistance in a variably spaced superlattice energy filter. Summers, C. J.; Brennan, K. F.; Torabi, A.; Harris, H. M. // Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p132 

    Resonant tunneling is reported for the first time in a series of variably spaced AlGaAs/GaAs multiple quantum well structures in which the levels in adjacent quantum wells are brought into alignment by an applied bias. Resonant tunneling and negative differential resistance effects are observed...

  • Negative transconductance via gating of the quantum well subbands in a resonant tunneling transistor. Beltram, Fabio; Capasso, Federico; Luryi, Serge; Chu, Sung-Nee G.; Cho, Alfred Y.; Sivco, Deborah L. // Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p219 

    Operation of a new resonant tunneling transistor is reported in the AlGaAs/GaAs material system. The device contains an undoped quantum well collector separated from a heavily doped emitter by a thin tunnel barrier. The collector is gated and the gate field controls resonant tunneling...

  • Realization of a three-terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor. Reed, M. A.; Frensley, W. R.; Matyi, R. J.; Randall, J. N.; Seabaugh, A. C. // Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p1034 

    A new three-terminal resonant tunneling structure in which current transport is controlled by directly modulating the potential of the quantum well is proposed and demonstrated. Typical current gains of 50 at room temperature are observed.

  • Nonlinear resonant tunneling through doubly degenerate state of quantum well. Ermakov, V.N.; Ponezha, E.A. // Low Temperature Physics;Apr97, Vol. 23 Issue 4, p314 

    Investigates tunneling of electrons through a double-barrier system in the approximation of low-transparency barriers taking into account the Coulomb interaction of electrons in the interbarrier space. State of electrons in the quantum well; Step-like form of dependence of the tunneling current...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics