Scanning photoluminescence spectroscopy in InAs/InGaAs quantum-dot structures

Dybiec, M.; Ostapenko, S.; Torchynska, T.V.; Losada, E. Velasquez
June 2004
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5165
Academic Journal
Spatially-resolved photoluminescence (PL) spectroscopy was performed at different temperatures on self-assembled InAs quantum dots embedded into MBE-grown In0.15Ga0.85As/GaAs multiquantum-well heterostructures. Strong inhomogeneity of the PL intensity is observed by mapping samples with different In/Ga composition of the InxGa1-xAs capping layers (0.1≤x≤0.2). Two different behaviors in the quantum-dot PL maps are observed: (1) a reduction of the PL intensity is accompanied by a gradual “blue” shift of the luminescence maximum at 300 K and “red” shift at 80 K, and (2) PL intensity variation occurs at a stable peak position of the PL maximum. Two separate mechanisms are suggested to account for the observed intensity variation of the quantum-dot luminescence.


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