Photoluminescence and resonant Raman scattering in highly conductive ZnO layers

Zalamai, V.V.; Ursaki, V.V.; Rusu, E.V.; Arabadji, P.; Tiginyanu, I.M.; Sirbu, L.
June 2004
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5168
Academic Journal
Photoluminescence (PL) and resonant Raman scattering (RRS) excited by the 351.1 nm line of an Ar+ laser were studied in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound on porous InP substrates. The emission spectra consist of multiphonon RRS lines superimposed on a broad asymmetric PL band with the maximum at 3.36 eV. The occurrence of PL and RRS is attributed to tailing of the density of states caused by potential fluctuations due to randomly distributed intrinsic defects.


Related Articles

  • Photoluminescence and resonant Raman scattering from ZnO-opal structures. Ursaki, V.V.; Tiginyanu, I.M.; Zalamai, V.V.; Masalov, V.M.; Samarov, E.N.; Emelchenko, G.A.; Briones, F. // Journal of Applied Physics;7/15/2004, Vol. 96 Issue 2, p1001 

    We study photoluminescence (PL) of ZnO-opal structures excited by a 351.1 nm laser line. The structures were fabricated by infiltration of ZnO from an aqueous solution of zinc nitrate into opal matrices. The emission spectrum of thick ZnO layers grown on the surface of bulk opals exhibits narrow...

  • Micro-Raman investigation of optical phonons in ZnO nanocrystals. Alim, Khan A.; Fonoberov, Vladimir A.; Shamsa, Manu; Balandin, Alexander A. // Journal of Applied Physics;6/15/2005, Vol. 97 Issue 12, p124313 

    We have measured nonresonant and resonant Raman-scattering spectra from ZnO nanocrystals with an average diameter of 20 nm. Based on our experimental data and comparison with the recently developed theory, we show that the observed shifts of the polar optical-phonon peaks in the resonant Raman...

  • Surface enhanced Raman scattering and photoluminescence properties of catalytic grown ZnO nanostructures. Panda, S. K.; Jacob, C. // Applied Physics A: Materials Science & Processing;Sep2009, Vol. 96 Issue 4, p805 

    Sword-like (diameter ranging from 40 nm to 300 nm) and needle-like zinc oxide (ZnO) nanostructures (average tip diameter ∼40 nm) were synthesized on annealed silver template over silicon substrate and directly on silicon wafer, respectively via thermal evaporation of metallic zinc followed...

  • Resonant Raman Study of Strain and Composition in InGaN Multiquantum Wells. Lazić, S.; Calleja, J. M.; Naranjo, F. B.; Fernández, S.; Calleja, E. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p221 

    Resonant Raman scattering measurements on In0.15Ga0.85N/GaN multiquantum wells are reported. Depending on their width, the multiquantum wells are either fully strained or relaxed, as shown by the Raman frequency of the A1(LO) phonon. In the strained sample, the A1(LO) frequency shows no...

  • Synthesis and band gap of ZnO particles with hexagonal bilayer structure. Zhang, Jianhui; Liu, Huaiyong; Wang, Zhenlin; Ming, Naiben // Applied Physics Letters;3/12/2007, Vol. 90 Issue 11, p113117 

    The unique water/PVP (polyvinylpyrrolidone)/n-pentanol interface has been developed to prepare the ZnO particles with hexagonal bilayer structure. By modifying the interface through varying the amount of PVP and water, one can readily tune the particle size and change the particle shape from...

  • Spatially resolved photoluminescence and Raman scattering experiments on the GaN /substrate.... Siegle, H.; Thurian, P. // Applied Physics Letters;2/26/1996, Vol. 68 Issue 9, p1265 

    Presents results of the spatially resolved photoluminescence and Raman scattering experiments on the gallium nitride (GaN)/substrate interface. Application of GaN on blue laser diodes; Strength of the luminescence band on the region near the interface; Sources of photoluminescence.

  • Order-Parameter Dependence of Spontaneous Electron Accumulation at Ga0.5In0.5P/GaAs Studied by Raman-Scattering and Photoluminescence Measurements. Yamashita, K.; Oe, K.; Kita, T.; Wada, O.; Wang, Y.; Geng, C.; Scholz, F.; Schweizer, H. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p387 

    We have investigated spontaneously accumulated two-dimensional electrons at the long-range ordered Ga0.5In0.5P/GaAs interface as a function of the order parameter. Raman-scattering and photoluminescence measurements reveal that the accumulated electron density and interface built-in electric...

  • Photoluminescence and multiphonon resonant Raman scattering in low-temperature grown ZnO nanostructures. Kumar, Bhupendra; Hao Gong; Shue Yin Chow; Tripathy, Sudhiranjan; Younan Hua // Applied Physics Letters;8/14/2006, Vol. 89 Issue 7, p071922 

    The authors report on the optical properties of nanocrystalline ZnO grown at 200 °C by radio-frequency magnetron sputtering. The nanocrystalline nature of the films was confirmed by cross-sectional transmission electron microscopy. In these films, ZnO nanocrystals with an average size of...

  • The influence of nitrogen plasma treatment on the lattice vibrational properties of hydrothermally grown ZnO nanorods. Le, H. Q.; Tripathy, S.; Chua, S. J. // Applied Physics Letters;4/7/2008, Vol. 92 Issue 14, p141910 

    In this study, the authors have investigated the optical properties of hydrothermally grown ZnO nanorods subjected to the combination of thermal annealing and nitrogen plasma treatments. In particular, ultraviolet-visible micro-Raman scattering has been used to study the influence of nitrogen...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics