Layering of ultrathin SiO2 film and study of its growth kinetics

Gayathri, N.; Banerjee, S.
June 2004
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5192
Academic Journal
A systematic kinetic study of SiO2 thin film thermally grown on Si(100) substrate by a single step and two step dry oxidation process is presented. Films grown at lower temperature (750°C) show higher density than films grown at higher temperature (1000°C). If the oxidation is carried out in two steps i.e., the first oxidation step at a lower temperature (750°C) and the second one at a higher temperature (1000°C), two distinct layers of SiO2 having different densities can be obtained. The film density was measured using the grazing incidence x-ray reflectivity technique. We also observed that when the thickness of the first “top” layer increases the growth of the “bottom” layer is retarded leading to lowering of total thickness of the SiO2 film even though the total oxidation time is increased.


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