TITLE

High temperature high-dose implantation of aluminum in 4H-SiC

AUTHOR(S)
Saks, N.S.; Suvorov, A.V.; Capell, D.C.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5195
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Heavily doped p-type layers obtained by implanting aluminum near its solubility limit (∼2×1020 Al/cm3) in 4H-SiC are characterized as a function of the implant and anneal temperatures. For a typical implant temperature of 650°C, Al activation rates of ∼6%–35% are obtained for anneals from 1600 to 1750°C, respectively. For higher temperature implants at 1000°C, the Al activation rates are significantly improved, approaching ∼100% for the same anneal temperatures, with a best p-type resistivity of ∼0.20 Ω cm. For SiC device fabrication, these results demonstrate that by using higher Al implant temperatures, lower anneal temperatures can be used while obtaining close to 100% Al activation.
ACCESSION #
13538764

 

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