TITLE

Ion implant dose dependence of photocarrier radiometry at multiple excitation wavelengths

AUTHOR(S)
Shaughnessy, Derrick; Bincheng Li; Mandelis, Andreas; Batista, Jerias
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5219
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The dependence of the photocarrier radiometric (PCR) signal on ion implant dose in Si is reported. The results show almost entirely monotonic behavior over a large range of industrially relevant fluences (1×1010–1×1016 cm-2) for 11B+, 75As+, 31P+, and BF2+ implanted in Si wafers at various energies. In addition, the use of excitation sources with a range of absorption coefficients is shown to be very useful in improving the sensitivity of the PCR amplitude to implant dose.
ACCESSION #
13538756

 

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