Ion implant dose dependence of photocarrier radiometry at multiple excitation wavelengths

Shaughnessy, Derrick; Bincheng Li; Mandelis, Andreas; Batista, Jerias
June 2004
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5219
Academic Journal
The dependence of the photocarrier radiometric (PCR) signal on ion implant dose in Si is reported. The results show almost entirely monotonic behavior over a large range of industrially relevant fluences (1×1010–1×1016 cm-2) for 11B+, 75As+, 31P+, and BF2+ implanted in Si wafers at various energies. In addition, the use of excitation sources with a range of absorption coefficients is shown to be very useful in improving the sensitivity of the PCR amplitude to implant dose.


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