Equilibrium shape of SiGe Stranski–Krastanow islands on silicon grown by liquid phase epitaxy

Hanke, M.; Schmidbauer, M.; Köhler, R.; Syrowatka, F.; Gerlitzke, A.-K.; Boeck, T.
June 2004
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5228
Academic Journal
SiGe Stranski–Krastanow islands coherently grown on Si(001) substrates by liquid phase epitaxy are typically made of truncated pyramids with {111} side facets, whereas the persistent presence of an (001) top facet indicates an energetical disadvantage of complete pyramids compared to truncated ones. We attribute this to a surface minimization process during the island evolution under the assumption of isotropically distributed surface energies and stable island facets. For the presence of {111} side facets we have theoretically derived a final geometrical aspect ratio of island base versus island height of 1.96, which is in excellent agreement with the experimentally derived averaged value of 2.08±0.10 within a concentration window between 9% and 30% germanium. © 2004 American Institute of Physics.


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