TITLE

Equilibrium shape of SiGe Stranski–Krastanow islands on silicon grown by liquid phase epitaxy

AUTHOR(S)
Hanke, M.; Schmidbauer, M.; Köhler, R.; Syrowatka, F.; Gerlitzke, A.-K.; Boeck, T.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5228
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
SiGe Stranski–Krastanow islands coherently grown on Si(001) substrates by liquid phase epitaxy are typically made of truncated pyramids with {111} side facets, whereas the persistent presence of an (001) top facet indicates an energetical disadvantage of complete pyramids compared to truncated ones. We attribute this to a surface minimization process during the island evolution under the assumption of isotropically distributed surface energies and stable island facets. For the presence of {111} side facets we have theoretically derived a final geometrical aspect ratio of island base versus island height of 1.96, which is in excellent agreement with the experimentally derived averaged value of 2.08±0.10 within a concentration window between 9% and 30% germanium. © 2004 American Institute of Physics.
ACCESSION #
13538753

 

Related Articles

  • Silicon vapor phase epitaxial growth catalysis by the presence of germane. Garone, P. M.; Sturm, J. C.; Schwartz, P. V.; Schwarz, S. A.; Wilkens, B. J. // Applied Physics Letters;3/26/1990, Vol. 56 Issue 13, p1275 

    Experiments involving the epitaxial growth of GexSi1-x films by chemical vapor deposition have shown that the addition of germane greatly enhances the growth rate, compared to that seen with dichlorosilane alone. Careful analysis shows that the increase is not accounted for by summing the...

  • Structure imaging of commensurate GexSi1-x/Si(100) interfaces and superlattices. Hull, R.; Gibson, J. M.; Bean, J. C. // Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p179 

    High resolution electron microscopy is used to study interfacial quality in commensurate GexSi1-x systems grown by molecular beam epitaxy. Structure images of interfaces have been obtained, yielding atomic-scale information about sharpness and smoothness. From careful consideration of image...

  • Dependence of critical thickness on growth temperature in GexSi1-x/Si superlattices. Miles, R. H.; McGill, T. C.; Chow, P. P.; Johnson, D. C.; Hauenstein, R. J.; Nieh, C. W.; Strathman, M. D. // Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p916 

    We present direct evidence for the dependence of critical thickness on growth temperature in a lattice-mismatched epitaxial system. Ge0.5Si0.5/Si strained-layer superlattices have been grown by molecular beam epitaxy on (100) Si substrates at temperatures between 330 and 530 °C. The extent to...

  • Solid phase epitaxial regrowth of Si1-xGex/Si strained-layer structures amorphized by ion implantation. Chilton, B. T.; Robinson, B. J.; Thompson, D. A.; Jackman, T. E.; Baribeau, J.-M. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p42 

    Strained-layer structures consisting of ∼30–35 nm Si1-xGex (x=0.16–0.29) and 33 nm Si deposited by molecular beam epitaxy on a (100)Si substrate have been amorphized by ion implantation at 40 K with 120 keV As+. Rutherford backscattering/channeling measurements using 2 MeV He+...

  • Effect of Surface Segregation on the Sharpness of Heteroboundaries in Multilayered Si(Ge)/Si[sub 1 � ][sub x]Ge[sub x] Structures Grown from Atomic Beams in Vacuum. Ivina, N. L.; Orlov, L. K. // Physics of the Solid State;Jun2001, Vol. 43 Issue 6, p1182 

    The main reasons for composition intermixing in the vicinity of heteroboundaries in an Si(Ge)/Si[sub 1-x]Ge[sub x] heterosystem grown by the molecular beam epitaxy method are considered. The proposed model explains all the experimentally observed peculiarities, such as the clearly manifested...

  • Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient. Spadafora, M.; Privitera, G.; Terrasi, A.; Scalese, S.; Bongiorno, C.; Camera, A.; Di Marino, M.; Napolitani, F. // Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3713 

    We present a study on thin oxides obtained by rapid thermal oxidation of Si[sub 1-x]Ge[sub x] epitaxial layers. The oxidation processes were performed in dry O[sub 2] at 1000 °C for times up to 600 s. Our data show an oxide growth rate enhancement with respect to pure Si. Except for a very...

  • SiGeC alloy layer formation by high-dose C[sup +] implantations into pseudomorphic metastable Ge[sub 0.08]Si[sub 0.92] on Si(100). Im, S.; Song, J. H.; Lie, D. Y. C.; Eisen, F.; Atwater, H.; Nicolet, M.-A. // Journal of Applied Physics;2/15/1997, Vol. 81 Issue 4, p1700 

    Dual-energy carbon implantation (l × 10[sup 16]/cm² at 150 and at 220 keV) was performed on 260-nm-thick undoped metastable pseudomorphic Si(100)/Ge[sub 0.08]Si[sub 0.92] with a 450-nm-thick SiO[sub 2] capping layer, at either room temperature or at 100 °C. After removal of the SiO[sub...

  • Kinetics of Si1-xGex(001) growth in Si(001)2x1 by gas-source molecular-beam epitaxy from Si2H6... Kim, H.; Taylor, N. // Journal of Applied Physics;12/1/1998, Vol. 84 Issue 11, p6372 

    Reports on the result of an investigation of the growth kinetics of epitaxial silicon (Si) germanium (Ge) layers deposited on Si(001) by gas-source molecular-beam epitaxy (GS-MBE) from Si2 hydrogen (H)6 and Ge2H6. Experimental procedure of the study; Microstructure of the film; Discussion of...

  • Ge-Si layered structures: Artificial crystals and complex cell ordered superlattices. Bevk, J.; Mannaerts, J. P.; Feldman, L. C.; Davidson, B. A.; Ourmazd, A. // Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p286 

    We report the first successful synthesis of ordered GeSi superlattices grown on (001) Si substrates by molecular beam epitaxy. Two types of structures were prepared and characterized: superlattices with one-dimensional periodicity of one unit cell (GeGeSiSi...) and complex cell superlattices...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics