Unique optical properties of AlGaN alloys and related ultraviolet emitters

Nam, K.B.; Li, J.; Nakarmi, M.L.; Lin, J.Y.; Jiang, H.X.
June 2004
Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5264
Academic Journal
Deep UV photoluminescence spectroscopy has been employed to study the optical properties of AlxGa1-xN alloys (0≤x≤1). The emission intensity with polarization of E⊥c and the degree of polarization were found to decrease with increasing x. This is a consequence of the fact that the dominant band edge emission in GaN (AlN) is with polarization of E⊥c(E∥c). Our experimental results suggest that the decreased emission efficiency in AlxGa1-xN alloys and related UV emitters could also be related with their unique polarization property, i.e., the intensity of light emission with polarization of E⊥c decreases with x. It is thus concluded that UV emitters with AlGaN alloys as active layers have very different properties from InGaN and other semiconductor emitters.


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