Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography

Austin, Michael D.; Haixiong Ge; Wei Wu; Mingato Li; Zhaoning Yu; Wasserman, D.; Lyon, S. A.; Chou, Stephen Y.
June 2004
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5299
Academic Journal
We report advances in nanoimprint lithography, its application in nanogap metal contacts, and related fabrication yield. We have demonstrated 5 nm linewidth and 14 nm linepitch in resist using nanoimprint lithography at room temperature with a pressure less than 15 psi. We fabricated gold contacts (for the application of single macromolecule devices) with 5 nm separation by nanoimprint in resist and lift-off of metal. Finally, the uniformity and manufacturability of nanoimprint over a 4 in. wafer were demonstrated.


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