TITLE

Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography

AUTHOR(S)
Austin, Michael D.; Haixiong Ge; Wei Wu; Mingato Li; Zhaoning Yu; Wasserman, D.; Lyon, S. A.; Chou, Stephen Y.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5299
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report advances in nanoimprint lithography, its application in nanogap metal contacts, and related fabrication yield. We have demonstrated 5 nm linewidth and 14 nm linepitch in resist using nanoimprint lithography at room temperature with a pressure less than 15 psi. We fabricated gold contacts (for the application of single macromolecule devices) with 5 nm separation by nanoimprint in resist and lift-off of metal. Finally, the uniformity and manufacturability of nanoimprint over a 4 in. wafer were demonstrated.
ACCESSION #
13495717

 

Related Articles

  • Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy. Titus, J.; Nguyen, H. P. T.; Mi, Z.; Perera, A. G. U. // Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p121901 

    We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the...

  • ZnSe/CdSe Superlattice Nanowires by Catalyst-assisted Molecular Beam Epitaxy. Karczewski, G.; Mahapatra, S.; Borzenko, T.; Dłużewski, P.; Kret, S.; Kłopotowski, L.; Schumacher, C.; Brunner, K.; Molenkamp, L. W.; Wojtowicz, T. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p65 

    We report on Au catalyst-assisted molecular beam epitaxy growth and properties of pure ZnSe and ZnSe/CdSe superlattice nanowires. In particular, we concentrate our attention on the morphological characterization by transmission and scanning electron microscopy of pure ZnSe NWs and we compare...

  • Facet structure of GaAs nanowires grown by molecular beam epitaxy. Mariager, S. O.; So\rensen, C. B.; Aagesen, M.; Nygård, J.; Feidenhans’l, R.; Willmott, P. R. // Applied Physics Letters;8/20/2007, Vol. 91 Issue 8, p083106 

    The shape and facets of GaAs nanowires grown by molecular beam epitaxy have been identified by the use of the diffuse scattering around the Bragg reflection from the parts of the nanowires having different crystal structures. The zinc blende parts of the nanowires are shown to have {111} facets...

  • Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface. Tsyrlin, G. É.; Samsonenko, Yu. B.; Petrov, V. N.; Polyakov, N. K.; Egorov, V. A.; Masalov, S. A.; Gorbenko, O. M.; Golubok, A. O.; Soshnikov, I. P.; Ustinov, V. M. // Technical Physics Letters;Sep2000, Vol. 26 Issue 9, p781 

    The possibility of obtaining a new nanostructured material, an InSiAs solid solution, by molecular beam epitaxy on the Si(001) surface is reported. It is demonstrated that, during simultaneous deposition of indium, silicon, and arsenic, nanometer-size islands with a rectangular base and the...

  • Spontaneous growth of coherent tilted superlattice on vicinal (100) GaAs substrates. Tsuchiya, M.; Petroff, P. M.; Coldren, L. A. // Applied Physics Letters;4/24/1989, Vol. 54 Issue 17, p1690 

    Periodic Al composition modulations have been observed to occur spontaneously during molecular beam epitaxy of AlGaAs on vicinal (100) substrates. The formation of the spontaneous Al modulation requires (a) the migration-enhanced epitaxy deposition and (b) one monolayer deposition of Al and Ga...

  • Growth temperature dependence of biquadratic coupling in Fe/Cr(100) superlattices studied by polarized neutron reflectivity and x-ray diffraction (abstract). Schäfer, M.; Wolf, J. A.; Grünberg, P.; Ankner, J. F.; Schreyer, A.; Zabel, H.; Majkrzak, C. F. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p6193 

    Presents an abstract of a study that measured the polarized neutron specular reflectivity of superlattices of nominal composition grown by molecular beam epitaxy.

  • Spectroscopic ellipsometry for characterization of InAs/Ga1-xInxSb superlattices. Wagner, J.; Schmitz, J.; Herres, N.; Fuchs, F.; Walther, M. // Journal of Applied Physics;5/15/1998, Vol. 83 Issue 10, p5452 

    Provides information on an experiment measuring the pseudodielectric function of InAs/Ga1-xInxSb superlattices (SLs) grown by solid-source molecular-beam epitaxy. Methodology used to conduct the experiment; Indepth look at spectroscopic ellipsometry (SE); Results of study.

  • Dependence of Al layer growth mode on Cr underlayer thickness in molecular-beam epitaxy of (001) Al/Cr superlattices. Kingetsu, Toshiki // Journal of Applied Physics;8/15/2000, Vol. 88 Issue 4, p1838 

    Investigates the dependence of aluminum (Al) layer growth on chromium (Cr) underlayer thickness in molecular beam epitaxy of Al/Cr superlattices. Use of in situ reflection high-energy electron and ex situ X-ray diffraction analysis; Dependence of epitaxy on Cr underlayer thickness; Stability of...

  • The growth and structure of short period (001) Hg1-xCdxTe-HgTe superlattices. Becker, C. R.; He, L.; Regnet, M. M.; Kraus, M. M.; Wu, Y. S.; Landwehr, G.; Zhang, X. F.; Zhang, H. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2486 

    Presents information on a study which investigated the molecular beam epitaxially grown short period (001) Hg[sub1-x]Cd[subx]Te-HgTe superlattices. Advantage of the superlattices in infrared applications compared to the alloy; Experimental and theoretical details; Results and discussion;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics