Decomposition of SiN interlayer during thermal annealing of HfAlOx/SiN/Si(001) structure

Kundu, Manisha; Miyata, Noriyuki; Morita, Yukinori; Horikawa, Tsuyoshi; Nabatame, Toshihide; Ichikawa, Masakazu; Toriumi, Akira
June 2004
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5326
Academic Journal
We investigated the effects of postdeposition annealing (PDA) on a 3.1-nm-HfA1Ox/0.45-nm-SiN/Si(001) structure under ultrahigh vacuum conditions. PDA caused the SiN interlayer (IL) to decompose, which was followed by N incorporation into the HfA1Ox film. A detailed assessment of temperature and time dependencies during the PDA of the structure indicated that the SiN IL decomposed with an activation energy of 0.7 eV, which was much lower than that of bulk β-phase Si3N4. We suggest that the presence of oxygen-deficient metal oxide sites at the internal dielectric interface of the structure was responsible for catalyzing IL decomposition during PDA.


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