Thermoelectric devices using InN and Al1-xInxN thin films prepared by reactive radio-frequency sputtering

Yamaguchi, Shigeo; Izaki, Ryohei; Kaiwa, Nakaba; Sugimura, Satoshi; Yamamoto, Atsushi
June 2004
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5344
Academic Journal
We have fabricated thermoelectric devices using InN and Al0.25In0.75N prepared by radio-frequency sputtering. The devices are composed of (a) Al0.25In0.75N-chromel of 20 pairs on SiO2 glass, (b) InN-chromel of 20 pairs on SiO2 glass, and (c) InN-chromel of 20 pairs on polyimide film. The maximum output power and the open output voltage were (a) 1.6 × 10-6 W and 0.21 V at the temperature difference ΔT=345 K, 263 × 10-12 W and 2.7 × 10-3 V at ΔT=4.8 K, (b) 3.9 × 10-6 W and 0.22 V at ΔT=332 K, 282 × 10-12 w and 2.4 × 10-3 V at ΔT=4.1 K, and (c) 0.33 × 10-6W and 0.089 V at ΔT=280 K, 63 × 10-12W and 1.4 × 10-3V at ΔT=4.5 K, respectively.


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