Ballistic transport in InSb/InAlSb antidot lattices

Hong Chen; Heremans, J. J.; Peters, J. A.; Goel, N.; Chung, S. J.; Santos, M. B.
June 2004
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5380
Academic Journal
We investigate magnetotransport properties of antidot lattices fabricated on high-mobility InSb/InAISb heterostructures. The temperature dependencies of the ballistic magnetoresistance peaks due to the antidot lattice are studied, and compared with mobility and density data over the same temperature range. A scattering time particular to antidot lattices is deduced, with a linear dependence on temperature between 0.4 and 50 K, attributed to acoustic phonon scattering. The mobility does not vary substantially over this temperature range, whereas above ∼60 K a quadratic dependence of inverse mobility on temperature is noticed, attributed to optical phonon scattering. The very weak temperature dependence of the width of the ballistic magnetoresistance peaks indicates negligible thermal smearing for electrons in the InSb quantum well, a result of the small electron effective mass.


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