Mobility studies of field-effect transistor structures based on anthracene single crystals

Aleshin, A. N.; Lee, J. Y.; Chu, S. W.; Kim, J. S.; Park, Y. W.
June 2004
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5383
Academic Journal
The charge carrier transport in anthracene single crystals has been studied by means of field-effect transistor (FET) structure. The FET mobility (μFET) revealed the nonmonotonous, reliant on gate-voltage (Vg), temperature dependence with the maximum μFET∼0.02 cm2/V s at T ∼170–180 K and Vg ∼ -30 V. At temperatures below 180 K the mobility decreases and becomes thermally activated with the Vg-dependent activation energy Ea∼40–70 meV governed by shallow traps. The space-charge-limited current is the dominant transport mechanism in FET structures based on anthracene single crystals.


Related Articles

  • Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors. Urabe, Yuji; Yokoyama, Masafumi; Takagi, Hideki; Yasuda, Tetsuji; Miyata, Noriyuki; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi // Applied Physics Letters;12/20/2010, Vol. 97 Issue 25, p253502 

    We report on In0.53Ga0.47As(100)-on-insulator metal-insulator-semiconductor field-effect transistors (InGaAs-OI MISFETs) on Si wafers with standard front-gate configuration. The channel mobility of the InGaAs-OI MISFETs was higher than those for InGaAs MISFETs on bulk InP wafers. The on/off...

  • Basic characteristics of metal-ferroelectric-insulator-semiconductor structure using a high-k PrO[sub x] insulator layer. Noda, Minoru; Kodama, Kazushi; Kitai, Satoshi; Takahashi, Mitsue; Kanashima, Takeshi; Okuyama, Masanori // Journal of Applied Physics;4/1/2003, Vol. 93 Issue 7, p4137 

    A metal-ferroelectric [SrBi[sub 2]Ta[sub 2]O[sub 9] (SBT)]-high-k-insulator(PrO[sub x])-semiconductor(Si) structure has been fabricated and evaluated as a key part of metal-ferroelectric-insulatorsemiconductor-field-effect-transistor MFIS-FET memory, aiming to improve the memory retention...

  • Field-modulated thermopower in SrTiO3-based field-effect transistors with amorphous 12CaO·7Al2O3 glass gate insulator. Ohta, Hiromichi; Masuoka, Yumi; Asahi, Ryoji; Kato, Takeharu; Ikuhara, Yuichi; Nomura, Kenji; Hosono, Hideo // Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p113505 

    We report transistor characteristics and field-modulated thermopower (S) for single crystal SrTiO3-based field-effect transistors (FETs). We use 150-nm-thick amorphous 12CaO·7Al2O3 glass as the gate insulator of the SrTiO3-FET. The resulting SrTiO3-FET exhibits excellent transistor...

  • Low-voltage and high-field-effect mobility organic transistors with a polymer insulator. Yunseok Jang; Do Hwan Kim; Yeong Don Park; Jeong Ho Cho; Minkyu Hwang; Kilwon Cho // Applied Physics Letters;2/13/2006, Vol. 88 Issue 7, p072101 

    A key issue in research into organic thin-film transistors (OTFTs) is low-voltage operation. In this study, we fabricated a pentacene thin-film transistor with an ultrathin layer of polyvinyl alcohol (9 nm) as a gate insulator, and obtained a device with excellent electrical characteristics at...

  • High-? dielectrics and advanced channel concepts for Si MOSFET. Wu, Mo; Alivov, Y. I.; Morko�, Hadis // Journal of Materials Science: Materials in Electronics;Oct2008, Vol. 19 Issue 10, p915 

    With scaling of the gate length downward to increase speed and density, the gate dielectric thickness must also be reduced. However, this practice which has been in effect for many decades has reached a fundamental limitation because gate dielectric thicknesses in the range of tunneling have...

  • Nanodiamond-gated diamond field-effect transistor for chemical sensing using hydrogen-induced transfer doping for channel formation. Ahmad, Rezal K.; Parada, Ana Carolina; Tumilty, Niall; Jackman, Richard B. // Applied Physics Letters;11/15/2010, Vol. 97 Issue 20, p203503 

    A method for attaching nanodiamonds (NDs) to H-terminated diamond devices displaying surface conductivity, configured as an ion-sensitive field-effect transistor and resistor sensor, is demonstrated. From Hall effect measurements, there was minimal sign of degradation of the p-type surface...

  • Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator. Hiroshiba, Nobuya; Kumashiro, Ryotaro; Tanigaki, Katsumi; Takenobu, Taishi; Iwasa, Yoshihiro; Kotani, Kenta; Kawayama, Iwao; Tonouchi, Masayoshi // Applied Physics Letters;10/9/2006, Vol. 89 Issue 15, p152110 

    High quality BaTiO3 thin-film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high...

  • Precursor route pentacene metal-insulator-semiconductor field-effect transistors. Brown, A. R.; Pomp, A.; de Leeuw, D. M.; Klaassen, D. B. M.; Havinga, E. E.; Herwig, P.; Müllen, K. // Journal of Applied Physics;2/15/1996, Vol. 79 Issue 4, p2136 

    Presents a study which constructed metal-insulator-semiconductor field-effect transistors with pentacene as the active semiconductor. Experimental procedures; Results of the study; Conclusion.

  • SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors. Huang, L. J.; Chu, J. O.; Canaperi, D. F.; D'Emic, C. P.; Anderson, R. M.; Koester, S. J.; Wong, H.-S. Philip // Applied Physics Letters;2/26/2001, Vol. 78 Issue 9, p1267 

    SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/chemical...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics