TITLE

Chemistry-mediated two-dimensional to three-dimensional transition of In thin films

AUTHOR(S)
Wei, H. L.; Hanchen Huang; Woo, C. H.; Zhang, X. X.; Zhou, L. G.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5401
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter reports a mechanism of chemistry-mediated two-dimensional to three-dimensional (2D-3D) transition during In thin film deposition, and the corresponding evolution of nanoscale islands. Using magnetron sputtering technique, we deposit In on Au substrate. Despite the fact that In wets on Au, In islands prevail over the uniform film soon after the deposition starts. The 2D-3D transition is found to be a result of the formation of Au3In on the Au substrate. The alloy formation leads to nonwetting of In, thereby the high mobility of In atoms and In clusters, and eventually well-separated In islands. The structures of In and Au are characterized by scanning electron microscopy, transmission electron microscopy, and electron diffraction.
ACCESSION #
13495683

 

Related Articles

  • Growth of Ti3SiC2 thin films by elemental target magnetron sputtering. Emmerlich, Jens; Högberg, Hans; Sasvári, Szilvia; Persson, Per O. Å.; Hultman, Lars; Palmquist, Jens-Petter; Jansson, Ulf; Molina-Aldareguia, Jon M.; Czigány, Zsolt // Journal of Applied Physics;11/1/2004, Vol. 96 Issue 9, p4817 

    Epitaxial Ti3SiC2(0001) thin films have been deposited by dc magnetron sputtering from three elemental targets of Ti, C, and Si onto MgO(111) and Al2O3(0001) substrates at temperatures of 800-900 ° C. This process allows composition control to synthesize Mn+1 AXn (MAX) phases (M: early...

  • Characterization of multiscale surface evolution of polycrystalline copper thin films. Yang, J. J.; Xu, K. W. // Journal of Applied Physics;5/15/2007, Vol. 101 Issue 10, p104902 

    Surface morphologies of Cu films with different thicknesses varying from 110 to 660 nm deposited on Ta-covered Si(111) substrates at 700 K by magnetron sputtering were investigated by atomic force microscopy (AFM). The global surface fluctuation image of the film was obtained directly from AFM...

  • Structural and tribological characterization of Ti–In–N films deposited by magnetron sputter deposition. Nowicki, Margaret A.; Krzanowski, James E.; Endrino, Jose L. // Journal of Materials Research;2012, Vol. 27 Issue 5, p850 

    TiN–indium composite films were deposited by simultaneous sputtering of titanium and indium in a mixed Argon/Nitrogen atmosphere and characterized for tribological applications. Film compositions showed a nonlinear behavior as a function of sputter gun power. For films deposited at...

  • Texture analysis of thin In2O3:Sn films prepared by direct-current and radio-frequency magnetron-sputtering. Mergel, Dieter; Thiele, Karola; Zhaohui Qiao // Journal of Materials Research;Sep2005, Vol. 20 Issue 9, p2503 

    Thin In2O3:Sn (ITO) films prepared by radio-frequency (rf) or direct-current (dc) magnetron-sputtering and in central or peripheral position relative to the target were characterized by x-ray diffractograms and pole figures. The diffractograms were normalized with the powder diffraction...

  • Surface roughness evolution of nanocomposite thin films. Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; De Hosson, J. Th. M. // Journal of Applied Physics;Jan2009, Vol. 105 Issue 1, p013523 

    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the...

  • Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magnetron sputtering. Tu, Ming-Lung; Su, Yan-Kuin; Ma, Chun-Yang // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p053705 

    Wide band gap nitrogen-doped p-type ZnO films are prepared by radio-frequency magnetron sputtering from a 99.99% purity ZnO target. The sputtering gas is Ar mixed with various flow rates of nitrogen gas. Hole concentrations increase from 1.89×1015 to 2.11×1019 cm-3 as the N2 flow rate...

  • Effect of deposition conditions on physical properties of SnO2 thin films prepared using the spray pyrolysis technique. Memarian, N.; Rozati, S.M. // Canadian Journal of Physics;Mar2012, Vol. 90 Issue 3, p277 

    In this study, physical properties of tin oxide thin films, which are prepared using the spray pyrolysis technique, have been analyzed. The effects of substrate temperature and precursor molarity on optoelectrical and structural properties of the films have been investigated. X-ray diffraction...

  • Structure and secondary electron emission properties of MgO films deposited by pulsed mid-frequency magnetron sputtering. Cheng, Y. H.; Kupfer, H.; Richter, F.; Giegengack, H.; Hoyer, W. // Journal of Applied Physics;2/1/2003, Vol. 93 Issue 3, p1422 

    A pulsed mid-frequency magnetron sputtering technique was used to deposit MgO films. Atomic force microscopy, Rutherford backscattering, x-ray diffraction, and a diode discharge device were used to characterize surface morphology, oxygen content, crystalline structure, and the secondary electron...

  • Synthesis of Nd(FeTi)[sub 12] films by sputtering. Panagiotopoulos, I.; Wang, D.; Niarchos, D.; Sellmyer, D.J. // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3528 

    Describes the synthesis of neodymium(FeTi)[sub 12] thin films by direct current magnetron sputtering system. Structural characterization by x-ray diffractometry and magnetic measurement; Influence of deposition parameters on phase formation and sputtered film texture; Results of the film...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics