Formation of Ge nanocrystals in HfAlO high- k dielectric and application in memory device

Ying Qian Wang; Jing Hao Chen; Won Jong Yoo; Yee-Chia Yeo; Sun Jung Kim; Gupta, Rohit; Tan, Zerlinda Y. L.; Dim-Lee Kwong; An Yan Du; Balasubramanian, N.
June 2004
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5407
Academic Journal
Formation of Ge nanocrystals embedded in HfA1O high-k dielectric by co-sputtering of HfO2, A12O3, and Ge, followed by rapid thermal annealing was demonstrated. Analysis by transmission electron microscopy and x-ray photoelectron spectroscopy confirmed the formation of nonoxidized Ge nanocrystals with a minimum size of about 5 nm embedded in HfA1O dielectric. We also demonstrated the application of such nanocrystals in nonvolatile memory devices, achieving a 2.2 V memory window as obtained from the C-V characterization of the memory device.


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