TITLE

Optimization of mid-infrared InAs/GaSb type-II superlattices

AUTHOR(S)
Haugan, H. J.; Szmulowicz, F.; Brown, G. J.; Mahalingam, K.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5410
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of small changes in GaSb layer width on the photoresponse spectrum of 20.5 Å InAs/InSb-interfaces/X Å GaSb type-II superlattice (SL) suitable for mid-infrared detection was investigated. By decreasing the GaSb width X from 27 to 18 Å, the cut-off wavelength was increased from 4.03 to 4.55 μm. This decrease of the SL bond gap and other effects of the design changes on photoresponse spectrum with narrower GaSb layers are explained by a nonperturbative, modified envelope function approximation calculation that includes the interface coupling of heavy, light, and spin orbit boles resulting from the in-plane asymmetry at InAs/GaSb interfaces.
ACCESSION #
13495680

 

Related Articles

  • Demonstration Of Rashba Spin Splitting In GaN-based Heterostructures. Weber, W.; Ganichev, S. D.; Seidl, S.; Bel'kov, V. V.; Golub, L. E.; Prettl, W.; Kvon, Z. D.; Hyun-Ick Cho; Jung-Hee Lee // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1311 

    The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN low dimensional structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin splitting of the conduction band in k-space in...

  • Tuning the carrier density of LaAlO3/SrTiO3 interfaces by capping La1-xSrxMnO3. Shi, Y. J.; Wang, S.; Zhou, Y.; Ding, H. F.; Wu, D. // Applied Physics Letters;2/18/2013, Vol. 102 Issue 7, p071605 

    We present a systematical study on the electronic transport properties of the insulating LaAlO3 (3 unit cells)/SrTiO3 interfaces capping with thin layers of La1-xSrxMnO3, whose formal polarization is continually tuned by Sr doping. When the Sr doping is lower than 2/3, the LaAlO3/SrTiO3...

  • Analysis of Charges and Surface States at the Interfaces of Semiconductor�Insulator�Semiconductor Structures. Berman, L. S.; Belyakova, E. I.; Kostina, L. S.; Kim, E. D.; Kim, S. C. // Semiconductors;Jul2000, Vol. 34 Issue 7, p786 

    A method for determining the energy spectrum of charges and surface-state densities at the interfaces of semiconductor-insulator-semiconductor structures was developed; the method is based on the analysis of capacitance-voltage characteristics. The method was experimentally tested with...

  • Effect of Modifying a Bi Nanolayer on the Charge Transport in Sb—n-Si—Bi—Ge33As12Se55—Sb Heterostructures. Kondrat, A. B.; Popovich, N. I.; Dovgoshej, N. I. // Semiconductors;Nov2004, Vol. 38 Issue 11, p1298 

    The current–voltage characteristics of the Sb–n-Si–Ge33As12Se55–Sb and Sb–n-Si–Bi–Ge33As12Se55–Sb heterostructures are studied. It is found that the presence of bismuth atoms in the transition region causes the current through the structure...

  • Direct patterning of functional interfaces in oxide heterostructures. Banerjee, N.; Huijben, M.; Koster, G.; Rijnders, G. // Applied Physics Letters;1/23/2012, Vol. 100 Issue 4, p041601 

    We report on the direct patterning of high-quality structures incorporating the LaAlO3-SrTiO3 interface by an epitaxial-liftoff technique avoiding any reactive ion beam etching. Detailed studies of temperature dependent magnetotransport properties were performed on the patterned heterostructures...

  • Comparison of transport, recombination, and interfacial quality in molecular beam epitaxy and.... Wolford, D.J.; Gilliland, G.D.; Kuech, T.F.; Klem, J.F.; Hjalmarson, H.P.; Bradley, J.A.; Tsang, C.F.; Martinsen, J. // Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1416 

    Compares the free-carrier recombination, transport and interface quality in molecular beam and organometallic vapor-phase epitaxy GaAs/Al[sub x]Ga[sub 1-x]As heterostructures. Link of nonradiative decay with photoluminescence efficiency; Recombination velocities and hole mobilities of the...

  • III–V semiconductor interface properties as a knowledge basis for modern heterostructure devices. Rizzi, A.; Lüth, H. // Applied Physics A: Materials Science & Processing;2002, Vol. 75 Issue 1, p69 

    Some examples of interface studies are reported which show their close link with progress in III–V modern semiconductor device physics and technology. The surface electronic properties investigated in-situ by reflectance anisotropy spectroscopy during InGaP/InP growth (metal-organic...

  • Barrier tuning by means of a quantum, interface-induced dipole in a doping layer. Müller, G.; Zrenner, A.; Koch, F.; Ploog, K. // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1564 

    We consider a sharply defined doping layer near the interface of a heterostructure on the narrow-gap side. It is shown that an interface-induced dipole moment results, whose magnitude depends on the quantum spread of the electronic charge. The result of thermionic emission measurement of the...

  • Atomic-scale morphology and interfaces of epitaxially embedded metal (CoAl)/semiconductor.... Tanaka, M.; Ikarashi, N. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p835 

    Demonstrates the atomic-scale morphology and interfaces of epitaxially embedded metal/semiconductor heterostructures. Influence of the gallium arsenide growth temperature on the buried metallic cobalt aluminide (CoAl) film; Implication of the low resistivity of the interface for the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics