Optimization of mid-infrared InAs/GaSb type-II superlattices

Haugan, H. J.; Szmulowicz, F.; Brown, G. J.; Mahalingam, K.
June 2004
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5410
Academic Journal
The effect of small changes in GaSb layer width on the photoresponse spectrum of 20.5 Å InAs/InSb-interfaces/X Å GaSb type-II superlattice (SL) suitable for mid-infrared detection was investigated. By decreasing the GaSb width X from 27 to 18 Å, the cut-off wavelength was increased from 4.03 to 4.55 μm. This decrease of the SL bond gap and other effects of the design changes on photoresponse spectrum with narrower GaSb layers are explained by a nonperturbative, modified envelope function approximation calculation that includes the interface coupling of heavy, light, and spin orbit boles resulting from the in-plane asymmetry at InAs/GaSb interfaces.


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