Work-function difference between Al and n-GaN from Al-gated n-GaN/nitrided-thin-Ga2O3/SiO2 metal oxide semiconductor structures

Bae, Choelhwyi; Krug, Cristiano; Lucovsky, Gerald; Chakraborty, Arpan; Mishra, Umesh
June 2004
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5413
Academic Journal
In most previous reports on Al-gated n-GaN/SiO2 metal oxide semiconductor (MOS) structures, the work-function difference between A1 and n-GaN (φms) has been chosen as 0 V by assuming that the work function of the A1 gate and n-GaN are both 4.1 eV. In this letter, φms is determined as ∼0.1 V using Al-gated n-GaN/nitrided-thin-Ga203/SiO2 MOS capacitors by measuring flatband voltage as a function of oxide thickness. Formation of an ultrathin (∼0.6-nm-thick) Ga203 layer on n-GaN prior to the deposition of SiO2 is important to prevent uncontrolled parasitic oxidation of the n-GaN surface and possibly reduces the interface dipole between n-GaN and SiO2.


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