Metalorganic vapor phase epitaxy InSb p+nn+ photodiodes with low dark current

Paltiel, Y.; Sher, A.; Raizman, A.; Shusterman, S.; Katz, M.; Zemel, A.; Calahorra, Z.; Yassen, M.
June 2004
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5419
Academic Journal
Photodiodes of InSb were fabricated on epilayers grown by metalorganic vapor phase epitaxy (MOVPE). Dark reverse current density as low as 1 × 10-7 A/cm2 at -0.1 V bias, and zero-bias-resistance area products as high as 1 × 106 Ω cm2 were measured. These values are comparable to the best values reported for InSb diodes grown by molecular-beam epitaxy. The very good uniformity of the diode dark current implies that MOVPE is a promising growth technique for the fabrication of state-of-the-art focal plane InSb detector arrays.


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