TITLE

Metalorganic vapor phase epitaxy InSb p+nn+ photodiodes with low dark current

AUTHOR(S)
Paltiel, Y.; Sher, A.; Raizman, A.; Shusterman, S.; Katz, M.; Zemel, A.; Calahorra, Z.; Yassen, M.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5419
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photodiodes of InSb were fabricated on epilayers grown by metalorganic vapor phase epitaxy (MOVPE). Dark reverse current density as low as 1 × 10-7 A/cm2 at -0.1 V bias, and zero-bias-resistance area products as high as 1 × 106 Ω cm2 were measured. These values are comparable to the best values reported for InSb diodes grown by molecular-beam epitaxy. The very good uniformity of the diode dark current implies that MOVPE is a promising growth technique for the fabrication of state-of-the-art focal plane InSb detector arrays.
ACCESSION #
13495677

 

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