Electron field emission from SiC/Si heterostructures by high temperature carbon implantation into silicon

Xing, Y. M.; Zhang, J. H.; Yang, W. W.; Yu, Y. H.; Song, Z. R.; Lin, Z. X.; Shen, D. S.
June 2004
Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5461
Academic Journal
A high-intensity electron field emission was obtained from a Sic/Si heterostructure, which was formed by high temperature carbon implantation into silicon. Densely distributed sharp tips were easily obtained at the interface of the SiC/Si heterostructure by post-implantation etching off the top Si. A low turn-on field of 2.6 V/μm was observed with samples formed by 160 keV carbon implantation with a dose of 8.0 × 1017 cm-2. The existence of the densely distributed small protrusions was considered as the main reason for efficient emission.


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