Electromechanically induced transition from nonohmic to ohmic behavior at contact interfaces

Kogut, L.; Komvopouios, K.
June 2004
Applied Physics Letters;6/14/2004, Vol. 84 Issue 24, p4842
Academic Journal
A straightforward method for removing thin insulating films from contact interfaces of conductive surfaces that enables changing the contact behavior from nonohmic to ohmic was derived in this study. The efficacy of this method is demonstrated by experiments performed with a special microdevice consisting of polysilicon. It is shown that the native oxide film can be removed from asperity nanocontacts at the contact interface by electromechanical means without damaging the microdevice. Measurements of electrical contact resistance versus applied current are used to characterize the contact interface. The present approach for removing oxide surface films that are responsible for the nonohmic behavior at microdevice contact interfaces is straightforward and can easily be applied to other types of miniaturized devices to enhance their reliability and performance. An additional benefit of this method is the release of adhered microdevices by nondestructive means. © 2004 American Institute of Physics.


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