Optical in-well pumping of a vertical-external-cavity surface-emitting laser

Schmid, Marc; Benchabane, Sarah; Torabi-Goudarzi, Firuz; Abram, Richard; Ferguson, Allister I.; Riis, Erling
June 2004
Applied Physics Letters;6/14/2004, Vol. 84 Issue 24, p4860
Academic Journal
A scheme is demonstrated for optical pumping of a vertical-external-cavity surface-emitting laser. The scheme is based on absorption of the pump light within the wells of the multiple-quantum-well gain structure rather than the conventional approach of absorption of a shorter wavelength in the barrier regions. The operation of a laser around 850 nm pumped by an 808 nm source demonstrates the potential of this technique for allowing operation at a significantly shorter range of wavelengths for these devices in general and specific application of high-brightness pump lasers for devices in this spectral region. A further advantage is the smaller quantum defect which results in reduced heating of the gain medium. These advantages are achieved while maintaining a slope efficiency of up to 18%, which is comparable to results obtained with a traditional pumping scheme with a similar gain medium. © 2004 American Institute of Physics.


Related Articles

  • Non-uniform carrier distribution in multi-quantum-well lasers. Smowton, P. M.; Lewis, G. M.; Sobiesierski, A.; Blood, P.; Lutti, J.; Osbourne, S. // Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p419 

    We describe an approach to detect the presence of a nonuniform distribution of carriers between the different wells of multi-quantum-well laser diodes by measuring the gain and spontaneous emission spectra and demonstrate its application to a five-well sample that has a nonuniform carrier...

  • Band Alignment and Carrier Recombination in GaAsSb/GaAs Quantum Wells. Hild, K.; Sweeney, S. J.; Jin, S. R.; Healy, S. B.; O'Reilly, E. P.; Johnson, S. R.; Wang, J.-B.; Zhang, Y.-H. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1431 

    Using a combination of experimental and theoretical techniques, we investigated the band alignment and the carrier recombination processes occurring in GaAsSb/GaAs structures. We find that for Sb fractions ∼30%, the band alignment is slightly type II. From studies on lasers based upon this...

  • Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser. Chan, R.; Feng, M.; Holonyak Jr., N.; James, A.; Walter, G. // Applied Physics Letters;4/3/2006, Vol. 88 Issue 14, p143508 

    Data are presented showing significant structure in the collector I-V characteristics of a transistor laser, a decrease (“compression”) in the common-emitter gain (β≡ΔIC/ΔIB), that can be mapped in some detail and related to quantum well (QW) carrier recombination....

  • Gain-bandwidth trade-off in a transistor laser: quantum well dislocation effect. Taghavi, Iman; Kaatuzian, Hassan // Optical & Quantum Electronics;Apr2009, Vol. 41 Issue 6, p481 

    The Authors report an analytical model to investigate optoelectronic characteristics reliance of a Transistor Laser on Quantum Well Location. Using simulated base recombination lifetime, optical frequency response for different quantum-well locations extracted. Slipping the well towards the...

  • Enhanced side-mode suppression in chaotic stadium microcavity lasers. Mestanza, S. N. M.; Von Zuben, A. A.; Frateschi, N. C. // Journal of Applied Physics;Mar2009, Vol. 105 Issue 6, p063101 

    We report an enhanced side-mode suppression in Bunimovich stadium lasers with strained InGaAs/InGaP quantum well (QW) active regions. This is realized with spatially selective carrier injection along a particular periodic orbit of the stadium. The selectivity is achieved using He+3 ion...

  • Impact of strain on deep ultraviolet nitride laser and light-emitting diodes. Sharma, T. K.; Towe, E. // Journal of Applied Physics;Apr2011, Vol. 109 Issue 8, p086104 

    To date, the shortest wavelength of an ultraviolet current-injection nitride laser has been limited to ∼340 nm. This begs the question of whether there is a fundamental limitation that restricts the realization of injection lasers below this wavelength. This letter investigates this issue....

  • Optical gain characteristics of staggered InGaN quantum wells lasers. Zhao, Hongping; Tansu, Nelson // Journal of Applied Physics;Jun2010, Vol. 107 Issue 11, p113110 

    Staggered InGaN quantum wells (QWs) are analyzed as improved gain media for laser diodes (LDs) lasing at 440 and 500 nm. The calculation of band structure is based on a 6-band k·p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric...

  • Intersubband emission and carrier dynamics in GaAs/AlGaAs tunnel-coupled quantum wells after ultrafast optical pumping. Hanna, Stefan; Silz, Wolfgang; Panevin, Vadim Yu.; Shalygin, Vadim A.; Vorobjev, Leonid E.; Firsov, Dmitry A.; Seilmeier, Alois; Zhukov, Alexey E.; Ustinov, Victor M. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p479 

    Optical mid-infrared (MIR) gain in n-doped tunnel-coupled semiconductor quantum well structures is studied at a sample temperature of 20 K. The structure is excited via the e1-e3, intersubband transition by an ultrashort MIR pulse and the gain at the e2-e3 transition frequency is monitored by a...

  • Light emission enhancement in blue InGaAlN/InGaN quantum well structures. Park, Seoung-Hwan; Moon, Yong-Tae; Han, Dae-Seob; Seo Park, Joong; Oh, Myeong-Seok; Ahn, Doyeol // Applied Physics Letters;10/31/2011, Vol. 99 Issue 18, p181101 

    Optical properties of blue AlInGaN/InGaN quantum well (QW) structures with a quaternary AlInGaN well layer were investigated by using the non-Markovian gain model with many-body effects. The band-gap expression of the AlInGaN materials was determined through a comparison with experimental...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics