TITLE

Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: The role of growth polarity and stoichiometry

AUTHOR(S)
Rummukainen, M.; Olla, J.; Laakso, A.; Saarinen, K.; Ptak, A. J.; Myers, T. H.
PUB. DATE
June 2004
SOURCE
Applied Physics Letters;6/14/2004, Vol. 84 Issue 24, p4887
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Positron annihilation spectroscopy is used to study vacancy defects in GaN grown by molecular-beam epitaxy due to different polar directions and varying stoichiometry conditions during oxygen doping. We show that Ga-polar material is free of compensating Ga vacancies up to [O]=1018 cm-3 in Ga stable growth, but high concentrations of VGa are formed in N-stable conditions. We also show that vacancy clusters are formed in N-polar material grown in Ga stable conditions, which may be related to the higher reactivity of the N-polar surface. These clusters have no apparent influence on the electrical properties of the material. We thus infer that their charge state is neutral. © 2004 American Institute of Physics.
ACCESSION #
13269866

 

Related Articles

  • Chemical composition changes across the interface of amorphous LaScO3 on Si (001). Liu, F.; Duscher, G. // Applied Physics Letters;10/8/2007, Vol. 91 Issue 15, p152901 

    An amorphous, high-dielectric-constant LaScO3 film was deposited directly on Si (001) by molecular-beam deposition at ∼100 °C. Various transmission electron microscopy techniques were applied to study the interface at atomic resolution. We observed an ∼3.5-nm-thick interfacial layer...

  • Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy. Li, Wei; Pessa, Markus; Ahlgren, Tommy; Decker, James // Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1094 

    Positron-annihilation measurements and nuclear reaction analysis [utilizing the [sup 14]N(d,p)[sup 15]N and [sup 14]N(d,He)[sup 12]C reactions] in conjunction with Rutherford backscattering spectrometry in the channeling geometry were used to study the defects in as-grown Ga(In)NAs materials...

  • Vacancy-type defects in BaTiO[sub 3]/SrTiO[sub 3] structures probed by monoenergetic positron beams. Uedono, Akira; Shimoyama, Kazuo; Kiyohara, Masahiro; Chen, Zhi Quan; Yamabe, Kikuo; Ohdaira, Toshiyuki; Suzuki, Ryoichi; Mikado, Tomohisa // Journal of Applied Physics;4/15/2002, Vol. 91 Issue 8, p5307 

    Thin BaTiO[sub 3] films grown on SrTiO[sub 3] substrates were characterized by means of positron annihilation. The films were deposited by molecular-beam epitaxy without using oxygen source. We measured the Doppler broadening spectra of annihilation radiation and x-ray diffraction of the films...

  • Influence of misfit dislocations on the electrical properties of CdTe layers grown by molecular beam epitaxy on InSb. Khattak, G.M.; Matthews, G.W.; Scott, C.G.; Yousaf, M. // Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p4053 

    The electrical properties of n-CdTe films grown by molecular beam epitaxy on (001) InSb substrates have been studied with a view to examining the influence of dislocations arising from strain relaxation in these materials. It is shown that the observed nonuniformity in free carrier density as a...

  • Molecular beam epitaxy of SrTiO3 with a growth window. Jalan, Bharat; Moetakef, Pouya; Stemmer, Susanne // Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p032906 

    Many complex oxides with only nonvolatile constituents do not have a wide growth window in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain stoichiometric films. Here it is shown that a growth window in which the stoichiometry is self-regulating can be...

  • Carrier mobility characteristics in GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy. Miyashita, Naoya; Shimizu, Yukiko; Okada, Yoshitaka // Journal of Applied Physics;8/15/2007, Vol. 102 Issue 4, p044904 

    We have investigated the electrical properties of GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy. We found that although the hole mobilities in Be-doped p-GaInNAs films exhibit a temperature dependence nearly identical to that for the homoepitaxial p-GaAs...

  • Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy. Hacke, P.; Feuillet, G.; Okumura, H.; Yoshida, S. // Applied Physics Letters;10/21/1996, Vol. 69 Issue 17, p2507 

    Reflection high-energy electron diffraction is used to study the stability of the (2×2) reconstruction on the (0001) surface of hexagonal-phase GaN as a function of growth parameters. The relationship between the critical conditions for existence of the reconstruction, which corresponds to a...

  • Line defects of M-plane GaN grown on γ-LiAlO2 by plasma-assisted molecular beam epitaxy. Lo, Ikai; Hsieh, Chia-Ho; Chen, Yen-Liang; Pang, Wen-Yuan; Hsu, Yu-Chi; Chiang, Jih-Chen; Chou, Ming-Chi; Tsai, Jenn-Kai; Schaadt, D. M. // Applied Physics Letters;5/19/2008, Vol. 92 Issue 20, p202106 

    The edge and threading dislocations of M-plane GaN epilayers grown on γ-LiAlO2 have been studied by high-resolution transmission electron microscope. We found that edge dislocations were grown in [1100] direction while threading dislocations were generated along a1 or -a2...

  • Strain relaxation dependent island nucleation rates during the Stranski–Krastanow growth of GaN on AlN by molecular beam epitaxy. Koblmüller, G.; Averbeck, R.; Riechert, H.; Hyun, Y.-J.; Pongratz, P. // Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p243105 

    This study reports on the correlation between strain relaxation and nucleation kinetics during the Stranski–Krastanow growth of GaN on (0001)AlN by plasma-assisted molecular beam epitaxy. Using reflection high-energy electron diffraction and real-time desorption mass spectrometry, the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics